P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 1/7
P-CHANN...
Description
CYStech Electronics Corp.
Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 1/7
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP4403SQ8
BVDSS
-20V
RDSON(MAX) 46mΩ
ID -6.1A
Description
The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
RDS(ON)=46mΩ@VGS=-10V, ID=-6.1A RDS(ON)=61mΩ@VGS=-4.5V, ID=-5A Simple drive requirement Low gate charge Low voltage drive (2.5V) Low on-resistance Fast switching speed Pb-free lead plating package
Equivalent Circuit
MTP4403SQ8
Outline
SOP-8
G:Gate S:Source D:Drain
Ordering Information
Device MTP4403SQ8
Package
SOP-8 (Pb-free lead plating package)
MTP4403SQ8
Shipping 3000 pcs / Tape & Reel
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Continuous Drain Current, TA=70℃ (Note 1)
Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1)
Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance, Junctio...
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