MTP4435AJ3

CYStech Electronics Corp. Spec. No. : C107J3 Issued Date : 2015.12.15 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTP4435AJ3 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-5V, ID=-7A -30V -37.3A -10A 11.4mΩ(typ) 16.7mΩ(typ) Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating and halogen-free package Symbol MTP4435AJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTP4435AJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTP4435AJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107J3 Issued Date : 2015.12.15 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=-10V, TC=25°C Continuous Drain Current @VGS=-10V, TC=100°C Continuous Drain Current @VGS=-10V, TA=25°C Continuous Drain Current @VGS=-10V, TA=70°C Pulsed Drain Current Single Pulse Avalanche Current @L=0.1mH Single Pulse Avalanche Energy @ L=1mH, VGS=-10V, VDD=-15V TC=25℃ Power Dissipation TC=100℃ TA=25℃ TA=100℃ Operating Junction and Storage Temperature Sym...