MTN9973J3

CYStech Electronics Corp. Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET MTN9973J3 BVDSS ID RDSON 60V 14A 80mΩ Features VDS=60V RDS(ON)=80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=4.5V, ID=6A Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol MTN9973J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Note : *1. Pulse width limited by safe operating area MTN9973J3 Symbol VDS VGS ID ID IDM Pd Tj, Tstg Limits 60 ±20 14 9 40 *1 27 0.22 -55~+150 Unit V V A A A W W/°C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 2/7 Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 4.5 110 Unit °C/W °C/W Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS IGSS IDSS 60 1.0 - - *RDS(ON) *RDS(ON) - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss - ...