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MTN3N60FP Dataheets PDF



Part Number MTN3N60FP
Manufacturers CYStech
Logo CYStech
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTN3N60FP DatasheetMTN3N60FP Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C798FP Issued Date : 2010.03.12 Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN3N60FP BVDSS : 600V RDS(ON) : 3.6Ω (typ.) ID : 3A Description The MTN3N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications.

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CYStech Electronics Corp. Spec. No. : C798FP Issued Date : 2010.03.12 Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN3N60FP BVDSS : 600V RDS(ON) : 3.6Ω (typ.) ID : 3A Description The MTN3N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Applications • Adapter • Switching Mode Power Supply Symbol MTN3N60FP Outline TO-220FP G:Gate D:Drain S:Source MTN3N60FP GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C798FP Issued Date : 2010.03.12 Revised Date : 2011.03.30 Page No. : 2/ 10 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID ID IDM EAS IAR EAR dv/dt TL PD Tj, Tstg Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=3A, VDD=50V, L=5mH, RG=25Ω, starting TJ=+25℃. 3. ISD≤3A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃. Limits 600 ±30 3* 1.8* 12* 24.5 3 3.3 4.5 300 33 0.26 -55~+150 Unit V V A A A mJ A mJ V/ns °C W W/°C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 3.84 62.5 Unit °C/W °C/W MTN3N60FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C798FP Issued Date : 2010.03.12 Revised Date : 2011.03.30 Page No. : 3/ 10 Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS 600 2.0 - *RDS(ON) - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss - Source-Drain Diode *IS - *ISM - *VSD - *trr - *Qrr - - - V VGS=0, ID=250μA, Tj=25℃ 0.65 - V/°C Reference to 25°C, ID=250μA - 4.0 V VDS = VGS, ID=250μA 1.8 - S VDS =15V, ID=1.5A - ±100 nA VGS=±30 - 1 10 μA VDS =600V, VGS =0 VDS =480V, VGS =0, Tj=125°C 3.6 4.5 Ω VGS =10V, ID=1.5A 11 - 2 - nC ID=3A, VDS=480V, VGS=10V 5- 10 - 27 24 - ns VDS=300V, ID=3A, VGS=10V, RG=25Ω 30 - 435 - 45 - pF VGS=0V, VDS=25V, f=1MHz 8- - 3 12 A - 1.5 V IS=3A, VGS=0V 250 1.6 - ns μC VGS=0, IF=3A, dI/dt=100A/μs *Pulse .


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