Document
CYStech Electronics Corp.
Spec. No. : C798FP Issued Date : 2010.03.12 Revised Date : 2011.03.30 Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTN3N60FP
BVDSS : 600V RDS(ON) : 3.6Ω (typ.)
ID : 3A
Description
The MTN3N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance • Simple Drive Requirement • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package
Applications
• Adapter • Switching Mode Power Supply
Symbol
MTN3N60FP
Outline
TO-220FP
G:Gate D:Drain S:Source
MTN3N60FP
GDS
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C798FP Issued Date : 2010.03.12 Revised Date : 2011.03.30 Page No. : 2/ 10
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS VGS ID ID IDM EAS IAR EAR dv/dt
TL
PD
Tj, Tstg
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=3A, VDD=50V, L=5mH, RG=25Ω, starting TJ=+25℃.
3. ISD≤3A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
Limits
600 ±30 3* 1.8* 12* 24.5
3 3.3 4.5
300
33 0.26 -55~+150
Unit
V V A A A mJ A mJ V/ns
°C
W W/°C
°C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol Rth,j-c
Rth,j-a
Value 3.84
62.5
Unit °C/W °C/W
MTN3N60FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C798FP Issued Date : 2010.03.12 Revised Date : 2011.03.30 Page No. : 3/ 10
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS ∆BVDSS/∆Tj
VGS(th) *GFS IGSS
IDSS
600
2.0 -
*RDS(ON)
-
Dynamic *Qg *Qgs *Qgd *td(ON) *tr
*td(OFF) *tf Ciss Coss Crss
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
*trr -
*Qrr -
- - V VGS=0, ID=250μA, Tj=25℃
0.65 - V/°C Reference to 25°C, ID=250μA
- 4.0 V VDS = VGS, ID=250μA
1.8 -
S VDS =15V, ID=1.5A
-
±100
nA VGS=±30
-
1 10
μA
VDS =600V, VGS =0 VDS =480V, VGS =0, Tj=125°C
3.6 4.5 Ω VGS =10V, ID=1.5A
11 -
2 - nC ID=3A, VDS=480V, VGS=10V
5-
10 -
27 24
-
ns
VDS=300V, ID=3A, VGS=10V, RG=25Ω
30 -
435 -
45 - pF VGS=0V, VDS=25V, f=1MHz
8-
-
3 12
A
- 1.5 V IS=3A, VGS=0V
250 1.6
-
ns μC
VGS=0, IF=3A, dI/dt=100A/μs
*Pulse .