MTN2302S3

CYStech Electronics Corp. Spec. No. : C323S3 Issued Date : 2015.05.29 Revised Date : Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET MTN2302S3 BVDSS ID@VGS=10V, TA=25°C RDSON(MAX)@VGS=4.5V, ID=3.6A RDSON(MAX)@VGS=2.5V, ID=3.1A 20V 2.9A 55mΩ(typ.) 65mΩ(typ.) Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-free lead plating and halogen-free package Symbol MTN2302S3 Outline SOT-323 D G：Gate S：Source D：Drain GS Ordering Information Device MTN2302S3-0-T1-G Package Shipping SOT-323 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTN2302S3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3) Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3) Continuous Drain Current @VGS=4.5V, TA=25°C (Note 4) Continuous Drain Current @VGS=4.5V, TA=70°C (Note 4) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Tj, Tstg Spec. No. : C323S3 Issued Date : 2015.05.29 Revised Date : Page No. : 2/9 Limits 20 ±12 2.9 2.3 2.3 1.8 30 0.7 (Note 3) 0.43 (Note 4) -55~+150 Unit V A W...