MTN2300AN3

CYStech Electronics Corp. Spec. No. : C323N3 Issued Date : 2015.01.06 Revised Date : Page No. : 1/8 20V N-Channel Enhancement Mode MOSFET MTN2300AN3 BVDSS ID@VGS=4.5V, TA=25°C RDSON@VGS=4.5V, ID=3.6A RDSON@VGS=2.5V, ID=3.1A 20V 3.6A 29mΩ(typ.) 39mΩ(typ.) Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-free lead plating and halogen-free package Symbol MTN2300AN3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTN2300AN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTN2300AN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C323N3 Issued Date : 2015.01.06 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3) Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Tj, Tstg Limits 20 ±12 3.6 2.9 10 1.38 (Note 3) 0.01 -55~+150 Unit V V A A A W W/°C °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, d...