MTN2310AV8

CYStech Electronics Corp. Spec. No. : C393V8 Issued Date : 2016.01.04 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTN2310AV8 BVDSS ID @ TC=25°C, VGS=10V ID @ TA=25°C, VGS=10V RDSON(TYP) VGS=10V, ID=3A VGS=4.5V, ID=2A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-free lead plating and halogen-free package 60V 14A 6A 29mΩ 33mΩ Equivalent Circuit MTN2310AV8 Outline Pin 1 DFN3×3 G：Gate D：Drain S：Source Ordering Information Device MTN2310AV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTN2310AV8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=14A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH Total Power Dissipation TC=25℃ TA=25℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IAS EAS EA...