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MTN18N20FP Dataheets PDF



Part Number MTN18N20FP
Manufacturers CYStech
Logo CYStech
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTN18N20FP DatasheetMTN18N20FP Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C840FP Issued Date : 2012.03.30 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN18N20FP BVDSS : 200V RDSON(TYP) : 80mΩ ID : 18A Description The MTN18N20FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features • .

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CYStech Electronics Corp. Spec. No. : C840FP Issued Date : 2012.03.30 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN18N20FP BVDSS : 200V RDSON(TYP) : 80mΩ ID : 18A Description The MTN18N20FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Symbol MTN18N20FP Outline TO-220FP G:Gate D:Drain S:Source MTN18N20FP GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C840FP Issued Date : 2012.03.30 Revised Date : Page No. : 2/ 10 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy @ L=2mH, ID=18 Amps, VDD=50V Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD≤10A, dI/dt≤100A/μs, VDD≤BVDSS, TJ=+150℃. Symbol VDS VGS ID ID IDM EAS EAR dv/dt TL TPKG Pd Tj, Tstg Limits 200 ±30 18* 11* 72* 324 10 3.0 300 260 41 0.33 -55~+150 Unit V V A A A mJ V/ns °C °C W W/°C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 3 62.5 Unit °C/W °C/W MTN18N20FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C840FP Issued Date : 2012.03.30 Revised Date : Page No. : 3/ 10 Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS IDSS 200 2.0 - - *RDS(ON) - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss - Source-Drain Diode *IS - *ISM - *VSD - *trr - *Qrr - 0.2 12 0.08 27 6 13 20 66 58 48 1233 154 53 80 240 4.0 ±100 10 100 0.12 - 18 72 1.5 - V V/°C V S nA μA Ω VGS=0, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =20V, ID=9A VGS=±30 VDS =200V, VGS =0 VDS =160V, VGS =0, Tj=125°C VGS =10V, ID=9A nC VDD=160V, ID=18A,VGS=10V ns VDD=100V, ID=18A, VGS=10V, RG=25Ω pF VGS=0V, VDS=25V, f=1MHz A V IS=18A, VGS=0V ns nC VGS=0, IF=18A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN18N20FP Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton MTN18N20FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C840FP Issued Date : 2012.03.30 Revised Date : Page No. : 4/ 10 Typical Characteristics Typical Output Characteristics 80 70 10V, 9V, 8V, 7V ID, Drain Current(A) 60 6V 50 40 30 20 10 0 0 VGS=5V 5 10 15 20 VDS, Drain-Source Voltage(V) 25 RDS(on), Static Drain-Source On-State Resistance(mΩ) Static Drain-Source On-State resistance vs Drain Current 200 180 160 VGS=4.5V 140 120 100 VGS=10V 80 60 40 20 0 0.1 1 10 ID, Drain Current(A) 100 RDS(on), Static Drain-Source OnState Resistance(mΩ) Static Drain-Source On-State Resistance vs Gate-Source Voltage 200 180 Ta=25°C 160 ID=9A 140 120 100 80 60 40 20 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) IDR, Reverse Drain Current(A) ID, Drain Current(A) RDS(on), Static Drain-Source On-state Resistance(Ω) Static Drain-Source On-resistance vs Ambient Temperature 200 160 120 80 40 0 -100 ID=9A, VGS=10V -50 0 50 100 TA, Ambient Temperature(°C) 150 Drain Current vs Gate-Source Voltage 80 70 Ta=25°C 60 VDS=10V 50 40 30 20 10 0 02 46 8 VGS, Gate-Source Voltage(V) 10 Body Diode Forward Voltage Variation vs Source Current and Temperature 100 VGS=0V 10 1 Ta=150°C 0.1 Ta=25°C 0.01 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source Drain Voltage(V) 1.4 MTN18N20FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C840FP Issued Date : 2012.03.30 Revised Date : Page No. : 5/ 10 Typical Characteristics(Cont.) Capacitance vs Reverse Voltage 10000 f=1MHz Ciss 1000 Brekdown Voltage vs Ambient Temperature 260 240 BVDSS, Drain-Source Breakdown Voltage (V) Capacitance-(pF) ID, Drain Current(A) Coss 100 10 0 Crss 5 10 15 20 25 VDS, Drain-to-Source Voltage(V) 30 Maximum Safe Operating Area 100 10μs 100μs 10 1ms 10ms 1 Operation in this area is limited by RDS(ON) 0.1 Single pulse Tc=25°C; Tj=150°C 100ms DC 0.01 1 10 100 VDS, Drain-Source Voltage(V) 1000 Maximu.


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