Document
CYStech Electronics Corp.
Spec. No. : C840FP Issued Date : 2012.03.30 Revised Date : Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTN18N20FP
BVDSS : 200V RDSON(TYP) : 80mΩ
ID : 18A
Description
The MTN18N20FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package
Symbol
MTN18N20FP
Outline
TO-220FP
G:Gate D:Drain S:Source
MTN18N20FP
GDS
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C840FP Issued Date : 2012.03.30 Revised Date : Page No. : 2/ 10
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy @ L=2mH, ID=18 Amps, VDD=50V Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃)
Linear Derating Factor Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD≤10A, dI/dt≤100A/μs, VDD≤BVDSS, TJ=+150℃.
Symbol
VDS VGS ID ID IDM EAS EAR dv/dt
TL
TPKG
Pd
Tj, Tstg
Limits
200 ±30 18* 11* 72* 324 10 3.0
300
260
41 0.33 -55~+150
Unit
V V A A A
mJ
V/ns
°C
°C
W W/°C
°C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol Rth,j-c
Rth,j-a
Value 3
62.5
Unit °C/W °C/W
MTN18N20FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C840FP Issued Date : 2012.03.30 Revised Date : Page No. : 3/ 10
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS ∆BVDSS/∆Tj
VGS(th) *GFS IGSS
IDSS IDSS
200 2.0 -
-
*RDS(ON)
-
Dynamic *Qg *Qgs *Qgd *td(ON) *tr
*td(OFF) *tf Ciss Coss Crss
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
*trr -
*Qrr -
0.2 12 0.08
27 6 13 20 66 58 48 1233 154 53
80 240
4.0 ±100 10 100 0.12
-
18 72 1.5 -
V V/°C
V S nA
μA
Ω
VGS=0, ID=250μA
Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =20V, ID=9A VGS=±30
VDS =200V, VGS =0
VDS =160V, VGS =0, Tj=125°C VGS =10V, ID=9A
nC VDD=160V, ID=18A,VGS=10V
ns
VDD=100V, ID=18A, VGS=10V, RG=25Ω
pF VGS=0V, VDS=25V, f=1MHz
A
V IS=18A, VGS=0V
ns nC
VGS=0, IF=18A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device MTN18N20FP
Package
TO-220FP (RoHS compliant)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
MTN18N20FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C840FP Issued Date : 2012.03.30 Revised Date : Page No. : 4/ 10
Typical Characteristics
Typical Output Characteristics 80 70 10V, 9V, 8V, 7V
ID, Drain Current(A)
60 6V 50
40 30 20
10 0 0
VGS=5V
5 10 15 20 VDS, Drain-Source Voltage(V)
25
RDS(on), Static Drain-Source On-State Resistance(mΩ)
Static Drain-Source On-State resistance vs Drain Current
200
180
160 VGS=4.5V
140
120
100 VGS=10V
80
60
40
20
0 0.1
1 10 ID, Drain Current(A)
100
RDS(on), Static Drain-Source OnState Resistance(mΩ)
Static Drain-Source On-State Resistance vs Gate-Source Voltage
200
180 Ta=25°C 160 ID=9A
140
120
100
80
60
40
20
0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
IDR, Reverse Drain Current(A)
ID, Drain Current(A)
RDS(on), Static Drain-Source On-state Resistance(Ω)
Static Drain-Source On-resistance vs Ambient Temperature 200
160
120
80
40
0 -100
ID=9A, VGS=10V
-50 0
50 100
TA, Ambient Temperature(°C)
150
Drain Current vs Gate-Source Voltage 80 70 Ta=25°C 60 VDS=10V
50
40
30
20
10
0 02 46 8 VGS, Gate-Source Voltage(V)
10
Body Diode Forward Voltage Variation vs Source Current and Temperature
100
VGS=0V 10
1 Ta=150°C
0.1 Ta=25°C
0.01 0
0.2 0.4 0.6 0.8 1 1.2 VSD, Source Drain Voltage(V)
1.4
MTN18N20FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C840FP Issued Date : 2012.03.30 Revised Date : Page No. : 5/ 10
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
f=1MHz
Ciss
1000
Brekdown Voltage vs Ambient Temperature 260
240
BVDSS, Drain-Source Breakdown Voltage (V)
Capacitance-(pF)
ID, Drain Current(A)
Coss 100
10 0
Crss
5 10 15 20 25 VDS, Drain-to-Source Voltage(V)
30
Maximum Safe Operating Area
100
10μs 100μs
10
1ms
10ms
1 Operation in this area is limited by RDS(ON)
0.1 Single pulse Tc=25°C; Tj=150°C
100ms DC
0.01 1
10 100 VDS, Drain-Source Voltage(V)
1000
Maximu.