MTN127KN3

CYStech Electronics Corp. Spec. No. : C141N3 Issued Date : 2015.08.06 Revised Date : Page No. : 1/9 600V N-Channel Enhancement Mode MOSFET MTN127KN3 BVDSS ID @VGS=10V, TA=25°C RDSON(TYP)@VGS=10V, ID=16mA RDSON(TYP)@VGS=4.5V, ID=16mA 600V 33mA 165Ω 166Ω Features Lower gate charge ESD protected gate Pb-free lead plating and Halogen-free package Equivalent Circuit MTN127KN3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device MTN127KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTN127KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C141N3 Issued Date : 2015.08.06 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C, VGS=10V TA=70°C, VGS=10V Pulsed Drain Current Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Tj, Tstg Limits 600 ±16 33 26 132 (Note 1 & 2) 0.5 (Note 3) 0.32 (Note 3) -55 ~ +150 Unit V mA W °C Thermal Characteristics Parameter Thermal Resistance, Junction to Ambient , max Thermal Resistance, Junction to Case, max Note : 1. Pulse width limited by maxi...