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TGD30N40P Dataheets PDF



Part Number TGD30N40P
Manufacturers TRinno
Logo TRinno
Description Field Stop Trench IGBT
Datasheet TGD30N40P DatasheetTGD30N40P Datasheet (PDF)

TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Plasma Display Panel, Soft switching application, D-PAK C GE Device TGD30N40P Package D-PAK Packaging type Reel Marking TGD30N40P Remark RoHS Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Power D.

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TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Plasma Display Panel, Soft switching application, D-PAK C GE Device TGD30N40P Package D-PAK Packaging type Reel Marking TGD30N40P Remark RoHS Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM PD TJ TSTG TL Value 400 ±30 60 30 300 56.8 22.7 -55 ~ 150 -55 ~ 150 300 Notes : (1) Repetitive rating : Pulse width limited by max junction temperature, PW ≤ 10µs, duty cycle ≤ 1%. Unit V V A A A W W ℃ ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC RθJA August. 2012 : Rev0 www.trinnotech.com Value 2.2 110 Unit ℃/W ℃/W 1/6 TGD30N40P Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate – Emitter Leakage Current BVCES ICES IGES VGE = 0V, IC = 1mA VCE = 400V, VGE = 0V VCE = 0V, VGE = ±30V 400 -- -- V -- -- 100 µA -- -- ± 250 nA ON Gate – Emitter Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2 3.1 4.5 Collector – Emitter Saturation Voltage VCE(SAT) VGE = 15V, IC = 30A, TJ = 25 oC -- 1.4 2.0 VGE = 15V, IC = 30A, TJ = 125 oC -- 1.52 -- V V V DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance CIES COES CRES VCE = 25V, VGE = 0V, f = 1MHz -- 845 -- 50 -- 23 ---- pF pF pF SWITCHING Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge td(on) -- 13 -- ns tr VCC = 150V, IC = 30A, RG = 5Ω, VGE = 15V, -- 105 -- ns td(off) Resistive Load, TJ = 25 oC -- 35 -- ns tf -- 160 -- ns td(on) -- 14 -- ns tr VCC = 150V, IC = 30A, RG = 5Ω, VGE = 15V, -- 145 -- ns td(off) Resistive Load, TJ = 125 oC -- 40 -- ns tf -- 240 -- ns Qg -- 26 -- nC Qge VCC = 150V, IC = 30A, VGE = 15V -- 3.1 -- nC Qgc -- 9 -- nC August. 2012 : Rev0 www.trinnotech.com 2/6 TGD30N40P Collector Current, Ic [A] Fig. 1 Output characteristics 200 Tc = 25 oC 150 20V 15V 12V 11V 100 10V 9V 8V 7V 6V 50 V = 5V GE 0 0 2 4 6 8 10 Collector - Emitter Voltage, V [V] CE Collector Current, Ic [A] Fig. 2 Saturation voltage characteristics 150 VGE = 15V 120 -25 oC 25 oC 125 oC 90 60 30 0 01234 Collector - Emitter Voltage, V [V] CE 5 Collector - Emitter Voltage, V [V] CE Fig. 3 Saturation voltage vs. collector current 2.5 VGE = 15V 2.0 I = 60A C 1.5 I = 30A C I = 15A C 1.0 0.5 -25 0 25 50 75 100 125 150 Case Temperature, T [oC] C Collector - Emitter Voltage, V [V] CE Fig. 4 Saturation voltage vs. gate bias 18 T = 25 oC 16 C 14 12 10 8 6 I = 15A C 30A 4 90A 60A 2 0 0 2 4 6 8 10 12 14 16 18 20 Gate - Emitter Voltage, V [V] GE Collector - Emitter Voltage, V [V] CE Fig. 5 Saturation voltage vs. gate bias 18 T = 125 oC 16 C 14 12 10 8 I = 15A 6C 30A 4 90A 60A 2 0 0 2 4 6 8 10 12 14 16 18 20 Gate - Emitter Voltage, V [V] GE Capacitance [pF] Fig. 6 Capacitance characteristics 1200 1000 Cies Common Emitter V =0V, f=1MHz GE T =25oC c 800 600 Coes 400 Cres 200 0 0.1 1 10 Collector - Emitter Voltage, V [V] CE August. 2012 : Rev0 www.trinnotech.com 3/6 Switching Time [ns] Fig. 7 Turn on time vs. gate resistance 1000 T r 100 10 T d(on) 1 0 20 Common Emitter V = 150V, V = 15V, I = 30A cc GE C T 25oC C T 125oC C 40 60 Gate Resistance, R [Ω] G 80 100 Fig. 9 Turn on time vs. Case temperature T r 100 10 T d(on) Common Emitter V = 150V, V = 15V, cc GE R = 5Ω, I = 30A GC 1 40 60 80 100 Case Temperature, T [oC] C 120 Switching Time [ns] TGD30N40P Fig. 8 Turn on time vs. collector current 1000 T r Switching Time [ns] 100 T d(on) 10 Common Emitter V = 150V, V = 15V, R = 5Ω cc GE G T 25oC C T 125oC C 1 10 20 30 40 50 60 70 80 90 Collector Current, I [A] C Fig. 10 Turn off time vs. gate resistance 1000 T d(off) 100 10 0 T f Common Emitter V = 150V, V = 15V, I = 30A cc GE C T 25oC C T 125oC C 20 40 60 80 Gate Resistance, R [Ω] G 100 Switching Time [ns] Switching Time [ns] Fig. 11 Turn off time vs. collector current 1000 100 T f T d(off) Fig. 12 Turn off time vs. Case temperature T f 100 Switching Time [ns] 10 Common Emitter V = 150V, V = 15V, R = 5Ω cc GE G T 25oC C T 125oC C 1 10 20 30 40 50 60 70 Collector Current, I [A] C August. 2012 : Rev0 T d(off) 10 Common Emitter Vcc= 150V, VGE = 15V, RG = 5Ω, IC = 30A 80 90 40 60 8.


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