Document
TGD30N40P
Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification
Applications : Plasma Display Panel, Soft switching application,
D-PAK C
GE
Device TGD30N40P
Package D-PAK
Packaging type Reel
Marking TGD30N40P
Remark RoHS
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage Continuous Current Pulsed Collector Current (Note 1) Power Dissipation Operating Junction Temperature
TC = 25 ℃ TC = 100 ℃
TC = 25 ℃ TC = 100 ℃
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Symbol VCES VGES
Ic
ICM
PD
TJ TSTG TL
Value 400 ±30 60 30 300 56.8 22.7 -55 ~ 150 -55 ~ 150
300
Notes : (1) Repetitive rating : Pulse width limited by max junction temperature, PW ≤ 10µs, duty cycle ≤ 1%.
Unit V V A A A W W ℃ ℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RθJC RθJA
August. 2012 : Rev0
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Value 2.2 110
Unit ℃/W ℃/W
1/6
TGD30N40P
Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate – Emitter Leakage Current
BVCES ICES IGES
VGE = 0V, IC = 1mA VCE = 400V, VGE = 0V VCE = 0V, VGE = ±30V
400 --
--
V
-- -- 100 µA
-- -- ± 250 nA
ON
Gate – Emitter Threshold Voltage
VGE(TH)
VGE = VCE, IC = 1mA
2 3.1 4.5
Collector – Emitter Saturation Voltage
VCE(SAT)
VGE = 15V, IC = 30A, TJ = 25 oC
--
1.4
2.0
VGE = 15V, IC = 30A, TJ = 125 oC -- 1.52
--
V V V
DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance
CIES COES CRES
VCE = 25V, VGE = 0V, f = 1MHz
-- 845 -- 50 -- 23
----
pF pF pF
SWITCHING Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge
td(on)
-- 13
--
ns
tr
VCC = 150V, IC = 30A, RG = 5Ω, VGE = 15V,
-- 105
--
ns
td(off)
Resistive Load, TJ = 25 oC
-- 35
--
ns
tf
-- 160
--
ns
td(on)
-- 14
--
ns
tr
VCC = 150V, IC = 30A, RG = 5Ω, VGE = 15V,
-- 145
--
ns
td(off)
Resistive Load, TJ = 125 oC
-- 40
--
ns
tf
-- 240
--
ns
Qg
-- 26
--
nC
Qge
VCC = 150V, IC = 30A, VGE = 15V
-- 3.1
--
nC
Qgc -- 9 -- nC
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TGD30N40P
Collector Current, Ic [A]
Fig. 1 Output characteristics
200 Tc = 25 oC
150
20V
15V 12V 11V
100
10V 9V 8V
7V
6V 50
V = 5V GE
0 0 2 4 6 8 10
Collector - Emitter Voltage, V [V] CE
Collector Current, Ic [A]
Fig. 2 Saturation voltage characteristics
150 VGE = 15V
120 -25 oC
25 oC
125 oC
90
60
30
0 01234
Collector - Emitter Voltage, V [V] CE
5
Collector - Emitter Voltage, V [V] CE
Fig. 3 Saturation voltage vs. collector current
2.5 VGE = 15V
2.0
I = 60A
C
1.5
I = 30A
C
I = 15A
C
1.0
0.5 -25
0
25 50 75 100 125 150
Case Temperature, T [oC] C
Collector - Emitter Voltage, V [V] CE
Fig. 4 Saturation voltage vs. gate bias
18 T = 25 oC
16 C
14
12
10
8
6
I = 15A
C
30A
4
90A 60A
2
0 0 2 4 6 8 10 12 14 16 18 20
Gate - Emitter Voltage, V [V] GE
Collector - Emitter Voltage, V [V] CE
Fig. 5 Saturation voltage vs. gate bias
18 T = 125 oC
16 C
14
12
10
8
I = 15A
6C
30A
4
90A 60A
2
0 0 2 4 6 8 10 12 14 16 18 20
Gate - Emitter Voltage, V [V] GE
Capacitance [pF]
Fig. 6 Capacitance characteristics
1200
1000
Cies
Common Emitter V =0V, f=1MHz
GE
T =25oC c
800
600 Coes
400
Cres 200
0 0.1 1 10
Collector - Emitter Voltage, V [V] CE
August. 2012 : Rev0
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Switching Time [ns]
Fig. 7 Turn on time vs. gate resistance
1000
T r
100
10 T d(on)
1 0 20
Common Emitter V = 150V, V = 15V, I = 30A
cc GE C
T 25oC C
T 125oC C
40 60
Gate Resistance, R [Ω] G
80
100
Fig. 9 Turn on time vs. Case temperature
T r
100
10
T d(on)
Common Emitter V = 150V, V = 15V,
cc GE
R = 5Ω, I = 30A GC
1 40 60 80 100
Case Temperature, T [oC] C
120
Switching Time [ns]
TGD30N40P
Fig. 8 Turn on time vs. collector current
1000
T r
Switching Time [ns]
100
T d(on)
10
Common Emitter V = 150V, V = 15V, R = 5Ω
cc GE G
T 25oC C
T 125oC C
1 10 20 30 40 50 60 70 80 90
Collector Current, I [A] C
Fig. 10 Turn off time vs. gate resistance
1000
T d(off)
100
10 0
T f Common Emitter V = 150V, V = 15V, I = 30A cc GE C
T 25oC C
T 125oC C
20 40 60 80
Gate Resistance, R [Ω] G
100
Switching Time [ns]
Switching Time [ns]
Fig. 11 Turn off time vs. collector current
1000
100
T f
T d(off)
Fig. 12 Turn off time vs. Case temperature
T f
100
Switching Time [ns]
10
Common Emitter V = 150V, V = 15V, R = 5Ω
cc GE G
T 25oC C
T 125oC C
1 10 20 30 40 50 60 70
Collector Current, I [A] C
August. 2012 : Rev0
T d(off)
10
Common Emitter Vcc= 150V, VGE = 15V,
RG = 5Ω, IC = 30A
80 90
40 60 8.