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TGAN30N120FD Dataheets PDF



Part Number TGAN30N120FD
Manufacturers TRinno
Logo TRinno
Description Field Stop Trench IGBT
Datasheet TGAN30N120FD DatasheetTGAN30N120FD Datasheet (PDF)

Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Induction Heating, Soft switching application TGAN30N120FD Field Stop Trench IGBT E GC Device TGAN30N120FD Package TO-3PN Marking TGAN30N120FD Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note.

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Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification Applications : Induction Heating, Soft switching application TGAN30N120FD Field Stop Trench IGBT E GC Device TGAN30N120FD Package TO-3PN Marking TGAN30N120FD Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Diode Maximum Forward Current TC = 100 ℃ Power Dissipation TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM IF IFM PD TJ TSTG TL Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Value 1200 ±20 60 30 90 30 90 329 132 -55 ~ 150 -55 ~ 150 300 Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC (IGBT) RθJC (DIODE) RθJA Value 0.38 2.1 40 Oct. 2013 : Rev1.1 www.trinnotech.com Remark RoHS Unit V V A A A A A W W ℃ ℃ ℃ Unit ℃/W ℃/W ℃/W 1/8 TGAN30N120FD Field Stop Trench IGBT Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate – Emitter Leakage Current BVCES ICES IGES VGE = 0V, IC = 1mA VCE = 1200V, VGE = 0V VCE = 0V, VGE = ± 20V ON Gate – Emitter Threshold Voltage VGE(TH) Collector – Emitter Saturation Voltage VCE(SAT) VGE = VCE, IC = 30mA VGE = 15V, IC = 30A, TC = 25 oC VGE = 15V, IC = 30A, TC = 125 oC DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (Note 2) CIES COES CRES VCE = 30V, VGE = 0V f = 1MHz Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge td(on) tr td(off) tf EON EOFF ETS td(on) tr td(off) tf EON EOFF ETS Qg Qge Qgc VCC = 600V, IC = 30A RG = 10Ω, VGE = 15V Inductive Load, TC = 25 oC VCC = 600V, IC = 30A RG = 10Ω, VGE = 15V Inductive Load, TC = 125 oC VCC = 600V, IC = 30A VGE = 15V Notes : (2) Not subject to production test – verified by design/characterization Min. Typ. Max. Unit 1200 -- -- V -- -- 1 mA -- -- ± 250 nA 3.5 5.5 7.5 V -- 2.0 2.5 V -- 2.3 -- V -- 4000 --- 105 --- 72 -- pF pF pF -- 40 -- ns -- 50 -- ns -- 245 -- ns -- 70 150 ns -- 4.5 6.75 mJ -- 0.85 1.28 mJ -- 5.35 8.03 mJ -- 46 -- ns -- 48 -- ns -- 256 -- ns -- 142 -- ns -- 4.87 7.30 mJ -- 1.82 2.73 mJ -- 6.67 10.03 mJ -- 220 330 nC -- 30 45 nC -- 90 135 nC Oct. 2013 : Rev1.1 www.trinnotech.com 2/8 TGAN30N120FD Field Stop Trench IGBT Electrical Characteristics of the DIODE TC=25℃, unless otherwise noted Parameter Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge Symbol VFM trr Irr Qrr Test condition IF = 30A IF = 30A, di/dt = 200A/µs TC = 25 oC TC = 125 oC TC = 25 oC TC = 125 oC TC = 25 oC TC = 125 oC TC = 25 oC TC = 125 oC Min. --------- Typ. 2.25 2.53 300 360 30 34 4400 6120 Max. 2.75 -- 450 -45 ---- Unit V ns A nC Oct. 2013 : Rev1.1 www.trinnotech.com 3/8 TGAN30N120FD Field Stop Trench IGBT IGBT Characteristics Fig. 1 Output characteristics 250 T = 25 oC C 200 VGE = 20 V 17 V 15 V 12 V Collector Current, I [A] C 150 10 V 100 50 0 0 2 4 6 8 10 Collector - Emitter Voltage, V [V] CE Collector Current, Ic [A] Fig. 2 Saturation voltage characteristics 200 180 VGE = 15 V 160 TC = 25 oC 140 TC = 125 oC 120 100 80 60 40 20 0 012345 Collector - Emitter Voltage, V [V] CE 6 Fig. 3 Saturation voltage vs. collector current 3.6 3.4 VGE = 15V 3.2 IC = 60A Collector - Emitter Voltage, V [V] CE 3.0 2.8 2.6 2.4 IC = 30A 2.2 2.0 1.8 IC = 15A 1.6 1.4 25 50 75 100 125 Case Temperature, T [oC] C 150 Collector - Emitter Voltage, V [V] CE Fig. 4 Saturation voltage vs. gate bias 18 o 16 TC = 25 C 14 12 10 8 6 I = 15A C 30A 4 60A 2 0 0 2 4 6 8 10 12 14 16 18 20 Gate - Emitter Voltage, V [V] GE Collector - Emitter Voltage, V [V] CE Fig. 5 Saturation voltage vs. gate bias 18 16 TC = 125 oC 14 12 10 8 I = 15A C 30A 6 60A 4 2 0 0 2 4 6 8 10 12 14 16 Gate - Emitter Voltage, V [V] GE Oct. 2013 : Rev1.1 Fig. 6 Capacitance characteristics 8000 7000 Cies 6000 Tc = 25oC Capacitance [pF] 5000 4000 18 20 3000 2000 Coes Cres 1000 0 0.1 Common Emitter VGE = 0V, f = 1MHz 1 10 Collector - Emitter Voltage, V [V] CE Coes www.trinnotech.com 4/8 IGBT Characteristics Fig. 7 Turn-on time vs. gate resistor TC = 25oC TC = 125oC Switching Time [ns] 100 t r t d.


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