Document
Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • RoHS compliant • JEDEC Qualification
Applications : Induction Heating, Soft switching application
TGAN30N120FD
Field Stop Trench IGBT
E GC
Device TGAN30N120FD
Package TO-3PN
Marking TGAN30N120FD
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current Pulsed Collector Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Diode Continuous Forward Current Diode Maximum Forward Current
TC = 100 ℃
Power Dissipation
TC = 25 ℃ TC = 100 ℃
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Symbol VCES VGES
Ic
ICM IF IFM
PD
TJ TSTG TL
Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature
Value 1200 ±20
60 30 90 30 90 329 132 -55 ~ 150 -55 ~ 150
300
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT) RθJC (DIODE)
RθJA
Value
0.38 2.1 40
Oct. 2013 : Rev1.1
www.trinnotech.com
Remark RoHS
Unit V V A A A A A W W ℃ ℃ ℃
Unit ℃/W ℃/W ℃/W
1/8
TGAN30N120FD
Field Stop Trench IGBT
Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate – Emitter Leakage Current
BVCES ICES IGES
VGE = 0V, IC = 1mA VCE = 1200V, VGE = 0V VCE = 0V, VGE = ± 20V
ON
Gate – Emitter Threshold Voltage
VGE(TH)
Collector – Emitter Saturation Voltage VCE(SAT)
VGE = VCE, IC = 30mA VGE = 15V, IC = 30A, TC = 25 oC VGE = 15V, IC = 30A, TC = 125 oC
DYNAMIC
Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (Note 2)
CIES COES CRES
VCE = 30V, VGE = 0V f = 1MHz
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge
td(on) tr
td(off) tf
EON EOFF ETS td(on)
tr td(off)
tf EON EOFF ETS Qg Qge Qgc
VCC = 600V, IC = 30A RG = 10Ω, VGE = 15V Inductive Load, TC = 25 oC
VCC = 600V, IC = 30A RG = 10Ω, VGE = 15V Inductive Load, TC = 125 oC
VCC = 600V, IC = 30A VGE = 15V
Notes : (2) Not subject to production test – verified by design/characterization
Min. Typ. Max. Unit
1200
--
-- V
-- -- 1 mA
-- -- ± 250 nA
3.5 5.5 7.5 V -- 2.0 2.5 V -- 2.3 -- V
-- 4000 --- 105 --- 72 --
pF pF pF
-- 40 -- ns -- 50 -- ns -- 245 -- ns -- 70 150 ns -- 4.5 6.75 mJ -- 0.85 1.28 mJ -- 5.35 8.03 mJ -- 46 -- ns -- 48 -- ns -- 256 -- ns -- 142 -- ns -- 4.87 7.30 mJ -- 1.82 2.73 mJ -- 6.67 10.03 mJ -- 220 330 nC -- 30 45 nC -- 90 135 nC
Oct. 2013 : Rev1.1
www.trinnotech.com
2/8
TGAN30N120FD
Field Stop Trench IGBT
Electrical Characteristics of the DIODE TC=25℃, unless otherwise noted
Parameter Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge
Symbol VFM trr Irr Qrr
Test condition
IF = 30A
IF = 30A, di/dt = 200A/µs
TC = 25 oC
TC = 125 oC TC = 25 oC TC = 125 oC TC = 25 oC TC = 125 oC TC = 25 oC TC = 125 oC
Min.
---------
Typ.
2.25 2.53 300 360 30 34 4400 6120
Max.
2.75 --
450 -45 ----
Unit V ns A nC
Oct. 2013 : Rev1.1
www.trinnotech.com
3/8
TGAN30N120FD
Field Stop Trench IGBT
IGBT Characteristics
Fig. 1 Output characteristics
250 T = 25 oC
C
200
VGE = 20 V 17 V
15 V
12 V
Collector Current, I [A] C
150 10 V
100
50
0 0 2 4 6 8 10
Collector - Emitter Voltage, V [V] CE
Collector Current, Ic [A]
Fig. 2 Saturation voltage characteristics
200 180 VGE = 15 V 160 TC = 25 oC 140 TC = 125 oC
120
100
80
60
40
20
0 012345
Collector - Emitter Voltage, V [V] CE
6
Fig. 3 Saturation voltage vs. collector current
3.6 3.4 VGE = 15V 3.2
IC = 60A
Collector - Emitter Voltage, V [V] CE
3.0
2.8
2.6
2.4 IC = 30A
2.2
2.0
1.8 IC = 15A 1.6
1.4 25
50 75 100 125
Case Temperature, T [oC] C
150
Collector - Emitter Voltage, V [V] CE
Fig. 4 Saturation voltage vs. gate bias
18
o
16 TC = 25 C
14
12
10
8
6
I = 15A
C
30A
4 60A
2
0 0 2 4 6 8 10 12 14 16 18 20
Gate - Emitter Voltage, V [V] GE
Collector - Emitter Voltage, V [V] CE
Fig. 5 Saturation voltage vs. gate bias
18 16 TC = 125 oC
14
12
10
8 I = 15A
C
30A 6
60A 4
2
0 0 2 4 6 8 10 12 14 16
Gate - Emitter Voltage, V [V] GE
Oct. 2013 : Rev1.1
Fig. 6 Capacitance characteristics
8000
7000 Cies 6000
Tc = 25oC
Capacitance [pF]
5000
4000
18 20
3000 2000
Coes Cres
1000
0 0.1
Common Emitter VGE = 0V, f = 1MHz
1 10
Collector - Emitter Voltage, V [V] CE
Coes
www.trinnotech.com
4/8
IGBT Characteristics
Fig. 7 Turn-on time vs. gate resistor
TC = 25oC TC = 125oC
Switching Time [ns]
100 t
r
t
d.