TGAN40N120FDR

Features 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5μs RoHS Compliant JEDEC Qualification Applications UPS, Welder, Inverter, Solar TGAN40N120FDR Field Stop Trench IGBT E GC Device TGAN40N120FDR Package TO-3PN Marking TGAN40N120FDR Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) TC = 25 ℃ TC = 100 ℃ Diode Continuous Forward Current Power Dissipation TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Operating Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES IC ICM IF PD TJ TSTG TL Value 1200 ±20 80 40 120 40 500 200 -55 ~ 150 -55 ~ 150 300 Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC (IGBT) RθJC (DIODE) RθJA Value 0.25 0.95 40 July 2015. Rev 0.0 www.trinnotech.com Remark RoHS Unit V V A A A A W W ℃ ℃ ℃ Unit ℃/W ℃/W ℃/W 1/8 TGAN40N120FDR Field Stop Trench IGBT Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition OFF Zero Gate Voltage Collector Current Gate – Emitter Leakage Cu...