N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP630Z(G)/TMPF630Z(G)
BVDSS 200V
N-channel MOSFET ID RDS(on)MAX 9A <0.4W
Device TMP630Z / TMPF630Z TMP630ZG / TMPF630ZG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP630Z / TMPF630Z TMP630ZG / TMPF630ZG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP630Z(G) TMPF630Z(G) 200 ±30
9 9* 4.4 4.4 * 36 36 *
162 9 5.2
52 17.3 0.41 0.138
4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
May 2012 : Rev0
www.trinnotech.com
TMP630Z(G) 2.4 62.5
TMPF630Z(G) 7.2 62.5
Unit ℃/W ℃/W
1/7
TMP630Z(G)/TMPF630Z(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
O...
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