N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance
TMP3N50AZ(G)/TMPF3N50AZ(G)
BVDSS 500V
N-channel MOSFET
ID RDS(on)
2.5A
< 2.8W
Device TMP3N50AZ / TMPF3N50AZ TMP3N50AZG / TMPF3N50AZG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP3N50AZ / TMPF3N50AZ TMP3N50AZG / TMPF3N50AZG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP3N50AZ(G) TMPF3N50AZ(G)
500
±30
2.5 2.5 *
1.71 1.71 *
10 10 *
84
2.5
5.2
52.1 17.3
0.416
0.138
4.5
-55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
TMP3N50AZ(G) 2.4 62.5
October 2012 : Rev0
www.trinnotech.com
TMPF3N50AZ(G) 7.2 62.5
Unit ℃/W ℃/W
1/7
TMP3N50AZ(G)/TMPF3N50AZ(G)
Electrical Characteristic...
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