TMPF5N50SG

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery TMP5N50SG/TMPF5N50SG VDSS = 550 V @Tjmax ID = 4A RDS(ON) = 1.85 W(max) @ VGS= 10 V D G S Device Package TMP5N50SG / TMPF5N50SG TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP5N50SG / TMPF5N50SG Remark Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP5N50SG TMPF5N50SG 500 ±30 4 4* 2.8 2.8 * 16 16* 240 4 9.25 92.5 32 0.74 0.25 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA June 2010 : Rev0 www.trinnotech.com TMP5N50SG 1.35 62.5 TMPF5N50SG 3.9 62.5 Unit ℃/W ℃/W 1/5 TMP5N50SG/TMPF5N50SG Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Bre...