N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery
TMP5N50SG/TMPF5N50SG
VDSS = 550 V @Tjmax ID = 4A RDS(ON) = 1.85 W(max) @ VGS= 10 V
D
G
S
Device
Package
TMP5N50SG / TMPF5N50SG
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP5N50SG / TMPF5N50SG
Remark Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP5N50SG TMPF5N50SG 500 ±30
4 4* 2.8 2.8 * 16 16*
240 4
9.25 92.5 32 0.74 0.25
4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
June 2010 : Rev0
www.trinnotech.com
TMP5N50SG 1.35 62.5
TMPF5N50SG 3.9 62.5
Unit ℃/W ℃/W
1/5
TMP5N50SG/TMPF5N50SG
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Bre...
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