N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP9N50S(G)/TMPF9N50S(G)
BVDSS 500V
N-channel MOSFET
ID RDS(on)
8.5A
<0.85W
D
G S
Device TMP9N50S / TMPF9N50S TMP9N50SG / TMPF9N50SG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP9N50S / TMPF9N50S TMP9N50SG / TMPF9N50SG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP9N50S(G) TMPF9N50S(G) 500 ±30
8.5 8.5 * 4.87 4.87 * 34 34 *
439 8.5 12.7 127 39 1.01 0.31 4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
June 2012 : Rev0
www.trinnotech.com
TMP9N50(G) 0.98 62.5
TMPF9N50S(G) 3.2 62.5
Unit ℃/W ℃/W
1/7
TMP9N50S(G)/TMPF9N50S(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
...
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