SSP5N60A

Advanced Power MOSFET SSP5N60A FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 25 μA (Max.) @ VDS = 600V ! Lower RDS(ON) : 1.81Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed ① Gate-to-Source Voltage Single Pulsed Avalanche Energy ② Avalanche Current ① Repetitive Avalanche Energy ① Peak Diode Recovery dv/dt ③ Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds BVDSS = 600 V RDS(on) = 2.2Ω ID = 4.5 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Value 600 4.5 2.8 18 ±30 331 4.5 11 3.0 110 0.88 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W/℃ ℃ Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 1.14 -62.5 Units ℃/W Rev. A SSP5N60A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min. Typ. Max. Units Test Condition Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Sou...