Document
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery
TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G
VDSS = 660 V @Tjmax ID = 9A RDS(ON) = 1.0 W(max) @ VGS= 10 V
D
G
Device TMP9N60 / TMPF9N60 TMP9N60G / TMPF9N60G
Package TO-220 / TO-220F TO-220 / TO-220F
S Marking TMP9N60 / TMPF9N60 TMP9N60G / TMPF9N60G
Remark RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
July 2010 : Rev0
Symbol RqJC RqJA
www.trinnotech.com
TMP9N60(G)
TMPF9N60(G)
600 ±30
9 9* 5 5*
44 44*
662 9
15.8 158 51.4
1.26 0.41
4.5 -55~150
300
TMP9N60(G) 0.79 62.5
TMPF9N60(G) 2.43 62.5
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃ ℃
Unit ℃/W ℃/W
1/5
TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 600 --
--
V
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
IDSS
VDS = 480 V, TC = 125°C
--
-- 1 µA -- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON Gate Threshold Voltage
Drain-Source On-Resistance Forward Transconductance (Note 4)
VGS(th) RDS(on)
gFS
VDS = VGS, ID = 250 µA VGS = 10 V, ID = 4.5 A VDS = 30 V, ID = 4.5 A
2 -- 4 -- 0.83 1.0 -- 10 --
V W S
DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5)
td(on) tr
td(off) tf Qg
Qgs Qgd
VDD = 250 V, ID = 9 A, RG = 25 Ω
VDS = 400V, ID = 9 A, VGS = 10 V
SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM VSD trr Qrr
----
---VGS = 0 V, IS = 9 A VGS = 0 V, IS = 9 A dIF / dt = 100 A/µs
Note :
1. Repeated rating : Pulse width limited by safe operating area 2. L=15mH, I AS = 9A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 9A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-- 1440 --- 123 --- 8.1 --
-- 50 --- 39 --- 133 --- 532 --- 27 --- 6.3 --- 6.9 --
pF pF pF
ns ns ns ns nC nC nC
-- -- 9 A
-- -- 36 A
-- -- 1.5 V
-- 350 --
ns
-- 3.2 -- mC
July 2010 : Rev0
www.trinnotech.com
2/5
Drain Current, I [A] D
Drain-Source On-Resistance R [Ω ]
DS(ON)
1. T = 25℃ C
2. 250μ s Pulse Test 20
10 Top V =15.0V
GS
10.0V 8.0V 7.0V 6.5V 6.0V Bottom 5.0V
0 0 10 20 30 40 50
Drain-Source Voltage, V [V] DS
2.0
T = 25℃ J
1.5
1.0
V = 10V GS
V = 20V GS
0.5
0.0 0
5 10 15 20 25
Drain Current,I [A] D
2500 2000 1500 1000
500 0 10-1
C = C + C (C = shorted) iss gs gd ds
C =C +C oss ds gd
C =C rss gd V =0V GS f = 1 MHz
C iss
C oss
C rss
100 101
Drain-Source Voltage, V [V] DS
Gate-Source Voltage, V [V] GS
Reverse Drain Current, I [A] DR
Drain Current, I [A] D
TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G
V = 30V DS
250 μ s Pulse Test
10 150℃
25℃ 1
-55℃
0.1 02468
Gate-Source Voltage, V [V] GS
50
V = 0V GS
250μ s Pulse Test
40
30 150℃ 25℃
20
10
0 0.0 0.5 1.0 1.5 2.0 2.5
Source-Drain Voltage, V [V] SD
3.0
12 I = 9A
D
10
8
6
4
2
0 05
V = 100V DS
V = 250V DS
V = 400V DS
10 15 20
Total Gate Charge, Q [nC] G
25
30
Capacitance [pF]
July 2010 : Rev0
www.trinnotech.com
3/5
Drain-Source Breakdown Voltage BV , (Normalized)
DSS
TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G
1.20 1.15 1.10
V =0V GS
I = 250 μ A
D
1.05
1.00
0.95
0.90
0.85
0.80 -80
-40
0 40 80
Junction Temperature,T [oC] J
120
160
Drain-Source On-Resistance R , (Normalized)
DS(ON)
3.0
V = 10 V GS
I = 4.5 A
D
2.5
2.0
1.5
1.0
0.5
0.0 -80
-40
0 40 80 120
Junction Temperature, T [oC] J
160
200
Drain Current, I [A] D
10
8
6
4
2
0 25 50 75 100 125 150
Case Temperature, T [℃] C
TMP9N60(G)
102
Operation in This Area is Limited by R
DS(on)
10 us
100 u.