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TMPF9N60G Dataheets PDF



Part Number TMPF9N60G
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMPF9N60G DatasheetTMPF9N60G Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G VDSS = 660 V @Tjmax ID = 9A RDS(ON) = 1.0 W(max) @ VGS= 10 V D G Device TMP9N60 / TMPF9N60 TMP9N60G / TMPF9N60G Package TO-220 / TO-220F TO-220 / TO-220F S Marking TMP9N60 / TMPF9N60 TMP9N60G / TMPF9N60G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate.

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G VDSS = 660 V @Tjmax ID = 9A RDS(ON) = 1.0 W(max) @ VGS= 10 V D G Device TMP9N60 / TMPF9N60 TMP9N60G / TMPF9N60G Package TO-220 / TO-220F TO-220 / TO-220F S Marking TMP9N60 / TMPF9N60 TMP9N60G / TMPF9N60G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient July 2010 : Rev0 Symbol RqJC RqJA www.trinnotech.com TMP9N60(G) TMPF9N60(G) 600 ±30 9 9* 5 5* 44 44* 662 9 15.8 158 51.4 1.26 0.41 4.5 -55~150 300 TMP9N60(G) 0.79 62.5 TMPF9N60(G) 2.43 62.5 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/5 TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 -- -- V Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- IDSS VDS = 480 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) RDS(on) gFS VDS = VGS, ID = 250 µA VGS = 10 V, ID = 4.5 A VDS = 30 V, ID = 4.5 A 2 -- 4 -- 0.83 1.0 -- 10 -- V W S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5) td(on) tr td(off) tf Qg Qgs Qgd VDD = 250 V, ID = 9 A, RG = 25 Ω VDS = 400V, ID = 9 A, VGS = 10 V SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) IS ISM VSD trr Qrr ---- ---VGS = 0 V, IS = 9 A VGS = 0 V, IS = 9 A dIF / dt = 100 A/µs Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L=15mH, I AS = 9A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 9A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics -- 1440 --- 123 --- 8.1 -- -- 50 --- 39 --- 133 --- 532 --- 27 --- 6.3 --- 6.9 -- pF pF pF ns ns ns ns nC nC nC -- -- 9 A -- -- 36 A -- -- 1.5 V -- 350 -- ns -- 3.2 -- mC July 2010 : Rev0 www.trinnotech.com 2/5 Drain Current, I [A] D Drain-Source On-Resistance R [Ω ] DS(ON) 1. T = 25℃ C 2. 250μ s Pulse Test 20 10 Top V =15.0V GS 10.0V 8.0V 7.0V 6.5V 6.0V Bottom 5.0V 0 0 10 20 30 40 50 Drain-Source Voltage, V [V] DS 2.0 T = 25℃ J 1.5 1.0 V = 10V GS V = 20V GS 0.5 0.0 0 5 10 15 20 25 Drain Current,I [A] D 2500 2000 1500 1000 500 0 10-1 C = C + C (C = shorted) iss gs gd ds C =C +C oss ds gd C =C rss gd V =0V GS f = 1 MHz C iss C oss C rss 100 101 Drain-Source Voltage, V [V] DS Gate-Source Voltage, V [V] GS Reverse Drain Current, I [A] DR Drain Current, I [A] D TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G V = 30V DS 250 μ s Pulse Test 10 150℃ 25℃ 1 -55℃ 0.1 02468 Gate-Source Voltage, V [V] GS 50 V = 0V GS 250μ s Pulse Test 40 30 150℃ 25℃ 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 Source-Drain Voltage, V [V] SD 3.0 12 I = 9A D 10 8 6 4 2 0 05 V = 100V DS V = 250V DS V = 400V DS 10 15 20 Total Gate Charge, Q [nC] G 25 30 Capacitance [pF] July 2010 : Rev0 www.trinnotech.com 3/5 Drain-Source Breakdown Voltage BV , (Normalized) DSS TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G 1.20 1.15 1.10 V =0V GS I = 250 μ A D 1.05 1.00 0.95 0.90 0.85 0.80 -80 -40 0 40 80 Junction Temperature,T [oC] J 120 160 Drain-Source On-Resistance R , (Normalized) DS(ON) 3.0 V = 10 V GS I = 4.5 A D 2.5 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 Junction Temperature, T [oC] J 160 200 Drain Current, I [A] D 10 8 6 4 2 0 25 50 75 100 125 150 Case Temperature, T [℃] C TMP9N60(G) 102 Operation in This Area is Limited by R DS(on) 10 us 100 u.


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