TMPF12N60

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP12N60/TMPF12N60 TMP12N60G/TMPF12N60G VDSS = 660 V @Tjmax ID = 12A RDS(on) = 0.65 W(max) @ VGS= 10 V D G S Device TMP12N60 / TMPF12N60 TMP12N60G / TMPF12N60G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP12N60 / TMPF12N60 TMP12N60G / TMPF12N60G Remark RoHS Halogen Free Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP12N60(G) TMPF12N60(G) 600 ±30 12 12* 7.5 7.5* 48 48* 860 12 23.1 231 53 1.85 0.42 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP12N60(G) 0.54 62.5 May 2010 : Rev0 www.trinnotech.com TMPF12N60(G) 2.34 62.5 Unit ℃/W ℃/W 1/5 TMP12N60/TMPF12N60 TMP12N60G/TMPF12N60G Electrical Characteristics : TC=25℃, unless otherw...