TMPF4N65AZ

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance TMP4N65AZ(G)/TMPF4N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4.0A < 2.4W Device TMP4N65AZ / TMPF4N65AZ TMP4N65AZG / TMPF4N65AZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP4N65AZ / TMPF4N65AZ TMP4N65AZG / TMPF4N65AZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP4N65AZ(G) TMPF4N65AZ(G) 650 ±30 4 4* 2.63 2.63 * 16 16 * 206 4 9.84 98.4 32.8 0.78 0.26 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP4N65AZ(G) 1.27 62.5 September 2012 : Rev0 www.trinnotech.com TMPF4N65AZ(G) 3.8 62.5 Unit ℃/W ℃/W 1/7 TMP4N65AZ(G)/TMPF4N65AZ(G) Electrical Characteristics : TC=25℃, unless...