TMD6N65G

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMD6N65G/TMU6N65G VDSS = 715 V @Tjmax ID = 5.5A RDS(on) = 1.6 W(max) @ VGS= 10 V D-PAK I-PAK D G S Device TMD6N65/TMU6N65 TMD6N65G/TMU6N65G Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMD6N65/TMU6N65 TMD6N65G/TMU6N65G Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMD6N65(G)/TMU6N65(G) 650 ±30 5.5 3.46 22 196.6 5.5 12 120 0.96 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA June 2011 : Rev2 www.trinnotech.com TMD6N65(G)/TMU6N65(G) 1.04 110 Unit ℃/W ℃/W 1/6 TMD6N65G/TMU6N65G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown V...