TMPF7N65ZG

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP7N65Z(G)/TMPF7N65Z(G) BVDSS 650V N-channel MOSFET ID RDS(on) 6.5A <1.4W Device TMP7N65Z / TMPF7N65Z TMP7N65ZG / TMPF7N65ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP7N65Z / TMPF7N65Z TMP7N65ZG / TMPF7N65ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP7N65Z(G) TMPF7N65Z(G) 650 ±30 6.5 6.5 * 3.74 3.74 * 26 26 * 420 6.5 12 120 39 0.96 0.31 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP7N65Z(G) 1.04 62.5 June 2012 : Rev0 www.trinnotech.com TMPF7N65Z(G) 3.2 62.5 Unit ℃/W ℃/W 1/7 TMP7N65Z(G)/TMPF7N65Z(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test cond...