TMD3N80G

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMD3N80G/TMU3N80G VDSS = 880 V @Tjmax ID = 3A RDS(on) = 4.2 W(max) @ VGS= 10 V D-PAK I-PAK D Device TMD3N80G/TMU3N80G Package D-PAK/I-PAK G S Marking TMD3N80G/TMU3N80G Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA January 2011 : Rev0 www.trinnotech.com TMD3N80G/TMU3N80G 800 ±30 3 1.83 12 283 3 9.4 94 0.75 4.5 -55~150 300 TMD3N80G/TMU3N80G 1.33 110 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/4 TMD3N80G/TMU3N80G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 800 -- -- V Zero Gate Vol...