TMPF3N80

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP3N80/TMPF3N80 TMP3N80G/TMPF3N80G VDSS = 880 V @Tjmax ID = 3A RDS(ON) = 4.2 W(max) @ VGS= 10 V D G Device TMP3N80 / TMPF3N80 TMP3N80G / TMPF3N80G Package TO-220 / TO-220F TO-220 / TO-220F S Marking TMP3N80 / TMPF3N80 TMP3N80G / TMPF3N80G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient January 2013 : Rev. 1.0 Symbol RqJC RqJA www.trinnotech.com TMP3N80(G) TMPF3N80(G) 800 ±30 3 3* 1.83 1.83 * 12 12* 283 3 9.4 94 32 0.75 0.25 4.5 -55~150 300 TMP3N80(G) 1.33 62.5 TMPF3N80(G) 3.9 62.5 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/7 TMP3N80/TMPF3N80 TMP3N80G/TMPF3N80G Electrical Characteristics : TC=25℃, unless otherwise noted P...