DatasheetsPDF.com

TMPF7N80A Dataheets PDF



Part Number TMPF7N80A
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMPF7N80A DatasheetTMPF7N80A Datasheet (PDF)

Features  Low gate charge  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Top view TO-220F BVDSS 800V TMPF7N80A N-channel MOSFET ID RDS(on) 7A <1.9W Ordering Part Number TMPF7N80A Package TO-220F Marking TMPF7N80A Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Ene.

  TMPF7N80A   TMPF7N80A



Document
Features  Low gate charge  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Top view TO-220F BVDSS 800V TMPF7N80A N-channel MOSFET ID RDS(on) 7A <1.9W Ordering Part Number TMPF7N80A Package TO-220F Marking TMPF7N80A Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Symbol RqJC RqJA December 2013 : Rev 0.0 www.trinnotech.com Value 800 ±30 7 4 28 227 7 15.6 50 0.4 4.5 -55~150 300 Value 2.5 62.5 Remark RoHS Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/5 TMPF7N80A Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Unit OFF Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Forward Gate-Source Leakage Current Reverse Gate-Source Leakage Current BVDSS IDSS IGSSF IGSSR VGS = 0 V, ID = 250 µA VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125 ℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 800 ----- -- -- V -- 10 µA -- 100 µA -- 100 nA -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) RDS(on) gFS VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.5 A VDS = 30 V, ID = 3.5 A 2 -- 4 -- 1.59 1.9 -- 8 -- V W S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1410 --- 120 --- 20 -- pF pF pF SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5) td(on) tr td(off) tf Qg Qgs Qgd VDD = 400 V, ID = 7 A, RG = 25 Ω VDS = 640 V, ID = 7 A, VGS = 10 V -- 26 -- ns -- 49 -- ns -- 135 -- ns -- 60 -- ns -- 38 -- nC -- 5.6 -- nC -- 17 -- nC SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current IS ISM ---- -- -- 7 ---- -- -- 28 Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 7 A -- -- 1.5 Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) trr VGS = 0 V, IS = 7 A -- 540 -- Qrr dIF / dt = 100 A/µs -- 4.1 -- Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L=8.7mH, I AS = 7A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃, not subject to production test – verified by design/characterization 3 I SD ≤ 7A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics A A V ns µC December 2013 : Rev 0.0 www.trinnotech.com 2/5 Drain Current, I [A] D Fig. 1 Output Characteristics 12 Top V =15.0V GS 10.0V 9.0V 8.0V 9 7.0V 6.0V 5.0V Bottom 4.5V 6 3 1. T = 25℃ C 2. 250μs Pulse Test 0 0 5 10 15 20 Drain-Source Voltage, V [V] DS Fig. 3 On-Resistance vs. Drain Current and Gate voltage 2.5 T = 25℃ J V = 10V GS 2.0 V = 20V GS 1.5 TMPF7N80A Fig. 2 Transfer Characteristics V = 30V DS 250 μs Pulse Test 10 150℃ 25℃ 1 -55℃ Drain Current, I [A] D 0.1 2468 Gate-Source Voltage, V [V] GS Fig. 4 Body Diode Forward Voltage vs. Source Current and Temperature 30 V = 0V GS 250μs Pulse Test 20 150℃ 25℃ 10 10 Reverse Drain Current, I [A] DR Drain-Source On-Resistance, R [Ω] DS(ON) 1.0 0 2 4 6 8 10 12 Drain Current, I [A] D Fig. 5 Capacitance Characteristics 3000 2000 C = C + C (C = shorted) iss gs gd ds C =C +C oss ds gd C =C rss gd V =0V GS f = 1 MHz C iss Capacitance [pF] 1000 C oss C rss 0 10-1 100 101 Drain-Source Voltage, V [V] DS 0 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage, V [V] SD Fig. 6 Gate Charge Characteristics 12 I = 7.0A D 10 8 6 V = 400V DS V = 160V DS V = 640V DS Gate-Source Voltage, V [V] GS 4 2 0 0 10 20 30 40 Total Gate Charge, Q [nC] G December 2013 : Rev 0.0 www.trinnotech.com 3/5 TMPF7N80A Drain-Source Breakdown Voltage BV (Normalized) DSS Fig. 7 Breakdown Voltage vs. Temperature 1.20 1.15 1.10 V =0V GS I = 250 μA D 1.05 1.00 0.95 0.90 0.85 0.80 -80 -40 0 40 80 Junction Temperature,T [℃] J 120 160 Fig. 9 Maximum Drain Current vs. Case Temperature 8 Drain-Source On-Resistance R , (Normalized) DS(ON) Fig. 8 On-Resistance vs. Temperature 3.0 V = 10 V GS I = 3.5 A D 2.5 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 Junction Temperature, T [℃] J 160 Fig. 10 Gate Threshold Voltage vs. Junction Tem.


TMPF8N80G TMPF7N80A TMP4N80


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)