Document
Features
Low gate charge Improved dv/dt capability RoHS compliant JEDEC Qualification
Top view TO-220F
BVDSS 800V
TMPF7N80A
N-channel MOSFET ID RDS(on) 7A <1.9W
Ordering Part Number TMPF7N80A
Package TO-220F
Marking TMPF7N80A
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol VDSS VGS ID IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
Symbol RqJC RqJA
December 2013 : Rev 0.0
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Value 800 ±30 7 4 28 227 7 15.6 50 0.4 4.5
-55~150 300
Value 2.5 62.5
Remark RoHS
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃ ℃
Unit ℃/W ℃/W
1/5
TMPF7N80A
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Unit
OFF Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Forward Gate-Source Leakage Current Reverse Gate-Source Leakage Current
BVDSS IDSS IGSSF IGSSR
VGS = 0 V, ID = 250 µA VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125 ℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
800 -----
-- -- V
-- 10 µA
-- 100 µA
-- 100 nA
--
-100
nA
ON Gate Threshold Voltage
Drain-Source On-Resistance Forward Transconductance (Note 4)
VGS(th) RDS(on)
gFS
VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.5 A VDS = 30 V, ID = 3.5 A
2 -- 4 -- 1.59 1.9 -- 8 --
V W S
DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 1410 --- 120 --- 20 --
pF pF pF
SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5)
td(on) tr
td(off) tf Qg
Qgs Qgd
VDD = 400 V, ID = 7 A, RG = 25 Ω
VDS = 640 V, ID = 7 A, VGS = 10 V
-- 26 -- ns
-- 49 -- ns
-- 135 --
ns
-- 60 -- ns
-- 38 -- nC
-- 5.6 -- nC
-- 17 -- nC
SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current
IS ISM
---- -- -- 7 ---- -- -- 28
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 7 A
-- -- 1.5
Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4)
trr
VGS = 0 V, IS = 7 A
-- 540 --
Qrr
dIF / dt = 100 A/µs
-- 4.1 --
Note :
1. Repeated rating : Pulse width limited by safe operating area 2. L=8.7mH, I AS = 7A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃, not subject to production test – verified by design/characterization 3 I SD ≤ 7A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
A
A V ns µC
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Drain Current, I [A] D
Fig. 1 Output Characteristics
12 Top V =15.0V
GS
10.0V 9.0V 8.0V 9 7.0V 6.0V 5.0V Bottom 4.5V
6
3
1. T = 25℃ C
2. 250μs Pulse Test 0
0 5 10 15 20
Drain-Source Voltage, V [V] DS
Fig. 3 On-Resistance vs. Drain Current and Gate voltage
2.5 T = 25℃
J
V = 10V GS
2.0
V = 20V GS
1.5
TMPF7N80A
Fig. 2 Transfer Characteristics
V = 30V DS
250 μs Pulse Test 10
150℃
25℃
1
-55℃
Drain Current, I [A] D
0.1 2468
Gate-Source Voltage, V [V] GS
Fig. 4 Body Diode Forward Voltage vs. Source Current and Temperature
30 V = 0V
GS
250μs Pulse Test
20
150℃
25℃
10
10
Reverse Drain Current, I [A] DR
Drain-Source On-Resistance, R [Ω] DS(ON)
1.0 0 2 4 6 8 10 12
Drain Current, I [A] D
Fig. 5 Capacitance Characteristics
3000 2000
C = C + C (C = shorted) iss gs gd ds
C =C +C oss ds gd
C =C rss gd
V =0V GS
f = 1 MHz
C iss
Capacitance [pF]
1000
C oss
C rss
0 10-1 100 101
Drain-Source Voltage, V [V] DS
0 0.0 0.5 1.0 1.5 2.0
Source-Drain Voltage, V [V] SD
Fig. 6 Gate Charge Characteristics
12 I = 7.0A
D
10
8
6
V = 400V DS
V = 160V DS
V = 640V DS
Gate-Source Voltage, V [V] GS
4
2
0 0 10 20 30 40
Total Gate Charge, Q [nC] G
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TMPF7N80A
Drain-Source Breakdown Voltage BV (Normalized)
DSS
Fig. 7 Breakdown Voltage vs. Temperature
1.20 1.15 1.10
V =0V GS
I = 250 μA
D
1.05
1.00
0.95
0.90
0.85
0.80 -80
-40
0 40 80
Junction Temperature,T [℃] J
120
160
Fig. 9 Maximum Drain Current vs. Case Temperature
8
Drain-Source On-Resistance R , (Normalized)
DS(ON)
Fig. 8 On-Resistance vs. Temperature
3.0 V = 10 V
GS
I = 3.5 A
D
2.5
2.0
1.5
1.0
0.5
0.0 -80
-40 0
40 80 120
Junction Temperature, T [℃] J
160
Fig. 10 Gate Threshold Voltage vs. Junction Tem.