TMPF9N90G

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP9N90/TMPF9N90 TMP9N90G/TMPF9N90G VDSS = 990 V @Tjmax ID = 9A RDS(ON) = 1.4 W(max) @ VGS= 10 V D G Device TMP9N90 / TMPF9N90 TMP9N90G / TMPF9N90G Package TO-220 / TO-220F TO-220 / TO-220F S Marking TMP9N90 / TMPF9N90 TMP9N90G / TMPF9N90G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient November 2011 : Rev1 Symbol RqJC RqJA www.trinnotech.com TMP9N90(G) TMPF9N90(G) 900 ±30 9 9* 5.7 5.7 * 36 36* 221 9 29 290 48 2.32 0.38 4.5 -55~150 300 TMP9N90(G) 0.43 62.5 TMPF9N90(G) 2.6 62.5 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/5 TMP9N90/TMPF9N90 TMP9N90G/TMPF9N90G Electrical Characteristics : TC=25℃, unless otherwise noted Param...