Document
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S113P
MT3S113P
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
Unit: mm
FEATURES
• Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz)
Marking
R7
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Pw-Mini
JEDEC
-
JEITA
SC-62
TOSHIBA
2-5K1A
Weight : 0.05 g ( typ.)
Collector-emitter voltage
VCES
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Base current
IB
Collector power dissipation
PC(Note1)
Junction temperature
Tj
Storage temperature range
Tstg
Note1:The device is mounted on a ceramic board
13 V
5.3 V
0.6 V
100 mA
10 mA
1.6 W
150 °C
−55 to 150
°C
(25.4 mm x 25.4 mm x 0.8 mm (t))
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2009-12-01
Microwave Characteristics (Ta = 25°C)
MT3S113P
Characteristics
Symbol
Test Condition
Transition frequency Insertion gain
Noise figure
3rd order intermodulation distortion output intercept point
fT |S21e|2(1) |S21e|2(2)
NF(1) NF(2)
OIP3
VCE=5V,IC=50mA VCE=5V,IC=50mA,f=500MHz VCE=5V,IC=50mA,f=1GHz VCE=5V,IC=50mA,f=500MHz VCE=5V,IC=50mA,f=1GHz VCE=5V,IC=50mA,f=500MHz, ⊿f=1MHz
Min Typ Max Unit
5.5 7.7
⎯ GHz
⎯ 16 ⎯ dB
8.5 10.5 ⎯
dB
⎯ 0.95 ⎯
dB
⎯ 1.15 1.45 dB
32.5 36.7 ⎯ dBmW
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ Max Unit
Collector cut-off current DC current gain Output capacitance Reverse transfer capacitance
ICBO hFE Cob Cre
VCB=5V,IE=0 VCE=5V,IC=30mA VCB=5V,IE=0, f=1MHz VCB=5V,IE=0, f=1MHz (Note3)
⎯ ⎯ 0.1 200 ⎯ 400 ⎯ 1.65 ⎯ ⎯ 1.25 1.55
μA ⎯ pF pF
Note 3:Cre is measured using a 3-terminal method with capacitance bridge
Caution: This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of fT=60GHz class is used for this product. Please make enough tool and equipment earthed when you handle.
2 2009-12-01
1000
VCE=5V
hFE-IC
VCE=3V
100
IC-VBE
100 COMMON EMITTER VCE=5V
10 Ta=25°C
MT3S113P
1
0.1
Collector-current IC(mA)
DC current gain hFE
Collector-current IC(mA)
COMMON EMITTER 10 Ta=25°C
1 10
100
Collector-current IC(mA)
IC-VCE
COMMON EMITTER 100 Ta=25°C IB=520uA
90 80 70 60 50 40 30 20 10
0 0 12 3
4
440μA 360μA 280μA 200μA 120μA 40μA
56
Collector-emitter voltage VCE(V) Cre,Cob-VCB
2.8
2.4 Cob 2
IE=0 f=1MHz Ta=25°C
1.6 C.