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MT3S113P Dataheets PDF



Part Number MT3S113P
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Datasheet MT3S113P DatasheetMT3S113P Datasheet (PDF)

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking R7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Pw-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Weight : 0.05 g ( typ.) Collector-emitter voltage VCES Collector-emitter voltage VCEO Emitter-base .

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TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking R7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Pw-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Weight : 0.05 g ( typ.) Collector-emitter voltage VCES Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC Base current IB Collector power dissipation PC(Note1) Junction temperature Tj Storage temperature range Tstg Note1:The device is mounted on a ceramic board 13 V 5.3 V 0.6 V 100 mA 10 mA 1.6 W 150 °C −55 to 150 °C (25.4 mm x 25.4 mm x 0.8 mm (t)) Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-01 Microwave Characteristics (Ta = 25°C) MT3S113P Characteristics Symbol Test Condition Transition frequency Insertion gain Noise figure 3rd order intermodulation distortion output intercept point fT |S21e|2(1) |S21e|2(2) NF(1) NF(2) OIP3 VCE=5V,IC=50mA VCE=5V,IC=50mA,f=500MHz VCE=5V,IC=50mA,f=1GHz VCE=5V,IC=50mA,f=500MHz VCE=5V,IC=50mA,f=1GHz VCE=5V,IC=50mA,f=500MHz, ⊿f=1MHz Min Typ Max Unit 5.5 7.7 ⎯ GHz ⎯ 16 ⎯ dB 8.5 10.5 ⎯ dB ⎯ 0.95 ⎯ dB ⎯ 1.15 1.45 dB 32.5 36.7 ⎯ dBmW Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ Max Unit Collector cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO hFE Cob Cre VCB=5V,IE=0 VCE=5V,IC=30mA VCB=5V,IE=0, f=1MHz VCB=5V,IE=0, f=1MHz (Note3) ⎯ ⎯ 0.1 200 ⎯ 400 ⎯ 1.65 ⎯ ⎯ 1.25 1.55 μA ⎯ pF pF Note 3:Cre is measured using a 3-terminal method with capacitance bridge Caution: This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of fT=60GHz class is used for this product. Please make enough tool and equipment earthed when you handle. 2 2009-12-01 1000 VCE=5V hFE-IC VCE=3V 100 IC-VBE 100 COMMON EMITTER VCE=5V 10 Ta=25°C MT3S113P 1 0.1 Collector-current IC(mA) DC current gain hFE Collector-current IC(mA) COMMON EMITTER 10 Ta=25°C 1 10 100 Collector-current IC(mA) IC-VCE COMMON EMITTER 100 Ta=25°C IB=520uA 90 80 70 60 50 40 30 20 10 0 0 12 3 4 440μA 360μA 280μA 200μA 120μA 40μA 56 Collector-emitter voltage VCE(V) Cre,Cob-VCB 2.8 2.4 Cob 2 IE=0 f=1MHz Ta=25°C 1.6 C.


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