MT3S107FS
TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
MT3S107FS
VCO BUFFER STAGE VHF-SHF Low Noise A...
MT3S107FS
TOSHIBA
TRANSISTOR SILICON-GERMANIUM
NPN EPITAXIAL PLANER TYPE
MT3S107FS
VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application
FEATURES
Low Noise Figure :NF=0.85dB (@f=2GHz) High Gain:|S21e|2= 13dB (@f=2GHz)
Marking
3 42
2 1
+0.02 -0.04
0.6 ±0.05 0.35±0.05 0.15±0.05
Unit:mm
1.0±0.05 0.8±0.05
1 3
0.1±0.05 2 0.1±0.05
0.2±0.05
0.48
0.1±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range
Symbol
VCBO VCEO VEBO
IC IB PC(Note 1) Tj Tstg
Rating
10 4.5 1.5 20 10 100 150 −55~150
Unit
V V V mA mA mW °C °C
1.BASE
2.EM IT TER 3.COLLECTOR
fSM
JEDEC JEITA TOSHIBA Weight: 0.0006 g
2-1E1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Device mounted on a glass-epoxy PCB(1.0 cm2 x 1.0 mm (t))
1 2007-11-01
Microwave Characteristi...