2SB857, 2SB858
Silicon PNP Triple Diffused
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Application
Low frequency power amplifier complementary...
2SB857, 2SB858
Silicon
PNP Triple Diffused
www.DataSheet4U.com
Application
Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134
Outline
TO-220AB
1 23
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C
Symbol VCBO VCEO VEBO IC I C(peak) PC * 1 Tj Tstg
1. Base 2. Collector
(Flange) 3. Emitter
Ratings 2SB857 –70 –50 –5 –4 –8 40 150 –45 to +150
2SB858 –70 –60 –5 –4 –8 40 150 –45 to +150
Unit V V V A A W °C °C
2SB857, 2SB858
Electrical Characteristics (Ta = 25°C)
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Item
Symbol
Collector to base breakdown voltage
V(BR)CBO
Collector to emitter breakdown voltage
V(BR)CEO
Emitter to base breakdown voltage
V(BR)EBO
Collector cutoff current ICBO
DC current transfer ratio hFE1*1
hFE2
Collector to emitter saturation voltage
VCE(sat)
Base to emitter voltage VBE Gain bandwidth product fT
2SB857 Min Typ –70 —
–50 —
–5 —
—— 60 — 35 — ——
—— — 15
Max —
—
—
–1 320 — –1
–1 —
2SB858 Min Typ –70 —
–60 —
–5 —
—— 60 — 35 — ——
—— — 15
Notes: 1. The 2SB857 and 2SB858 are grouped by hFE1 as follows. 2. Pulse test
Max —
—
—
–1 320 — –1
–1 —
Unit Test conditions V IC = –10 µA, IE = 0
V IC = –50 mA, RBE = ∞
V IE = –10 µA, IC = 0
µA VCB = –50 V, IE = 0 VCE = IC = –1 A*2 –4 V IC = –0.1 A*2
V IC = –2 A, IB = –0.2 A*2
V MHz
VCE = –4...