N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP13N50/TMPF13N50 TMP13N50G/TMPF13N50G
VDSS = 550 V @Tjmax ID = 13A RDS(on) = 0.48 W(max) @ VGS= 10 V
D
G
S
Device TMP13N50 / TMPF13N50 TMP13N50G / TMPF13N50G
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP13N50 / TMPF13N50 TMP13N50G / TMPF13N50G
Remark RoHS
Halogen Free
Symbol VDS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP13N50(G) TMPF13N50(G) 500 ±30
13 13* 8.2 8.2* 52 52*
563 13 18.3 183 52 1.46 0.41 4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
TMP13N50(G) 0.63 62.5
May 2010 : Rev1
www.trinnotech.com
TMPF13N50(G) 2.4 62.5
Unit ℃/W ℃/W
1/5
TMP13N50/TMPF13N50 TMP13N50G/TMPF13N50G
Electrical Characteristics : TC=25℃, unless otherwi...
Similar Datasheet