2SC5812
Silicon NPN Epitaxial VHF/UHF wide band amplifier
ADE-208-1468(Z)
Rev.0 Nov. 2001
Features
• High power gain, ...
2SC5812
Silicon
NPN Epitaxial VHF/UHF wide band amplifier
ADE-208-1468(Z)
Rev.0 Nov. 2001
Features
High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)
Outline
MFPAK
Note: Marking is “WG–“.
3
1 2
1. Emitter 2. Base 3. Collector
2SC5812
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Ratings 15 4 1.5 50 80 150 −55 to +150
Unit V V V mA mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown V(BR)CBO 15 V voltage
IC = 10 µA, IE = 0
Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance
ICBO ICEO IEBO hFE Cre
0.1 µA
1
µA
0.1 µA
100 120 150
0.2 pF
VCB = 15 V, IE = 0 VCE = 4 V, RBE = Infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA VCE = 1 V, Emitter ground, f = 1 MHz
Collector output capacitance Cob
0.4 0.7 pF
VCB = 1 V, IE = 0,
f = 1 MHz
Gain bandwidth product
Gain bandwidth product
Forward transmission coefficient
fT(1)
8
11 GHz VCE = 1V, IC = 5 mA
fT(2)
15
GHz VCE = 1V, IC = 20 mA
|S21|2
14
17
dB VCE = 1 V, IC = 5 mA,
f = 900 MHz
Noise figure
NF 1.0 1.7 dB VCE = 1 V, IC = 5 mA, f = 900 MHz, ΓS...
