FK3306010L

DReovcisNioon. . T2 T4-EA-12592 FK3306010L Silicon N-channel MOSFET For switching FK350601 in SSSMini3 type package  Features  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol : CV  Packaging Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25C Parameter Symbol Drain-source voltage VDS Gate-source voltage VGS Drain current ID Pulse drain current IDp Total power dissipation PD Channel temperature Tch Operating Ambient Temperature Tstg Storage temperature Tstg Rating 60 12 100 200 100 150 -40 to + 85 -55 to +150 Unit V V mA mA mW C C C Product Standards MOS FET FK3306010L 1.2 0.3 3 Unit : mm 0.13 0.8 1.2 1 (0.4) (0.4) 0.8 2 0.2 0.52 1. Gate 2. Source 3. Drain Panasonic JEITA Code SSSMini3-F2-B SC-105AA SOT-723 Internal Connection (D) 3 12 (G) (S) Pin Name 1. Gate 2. Source 3. Drain Established : 2010-05-20 Revised : 2013-08-08 Page 1 of 5 DReovcisNioon. . T2 T4-EA-12592 Product Standards MOS FET FK3306010L  Electrical Characteristics Ta = 25C  3C Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = 1 mA, VGS = 0 60 V Drain-source cutoff current IDSS VDS = 60 V, VGS = 0 1.0 A Gate-source cutoff current IGSS VGS = 10 V, VDS = 0 10 A Gate threshold voltage VTH ID = 1.0 A, VDS = 3.0 V 0.9 1.2 1.5 V Drain-source ON resistance RDS(on)1 ID = ...