512K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C5128BL, IS65C5128BL
512K x 8 HIGH-SPEED CMOS STATIC RAM
JULY 2011
FEATURES
• High-speed access time: 45ns
• L...
Description
IS62C5128BL, IS65C5128BL
512K x 8 HIGH-SPEED CMOS STATIC RAM
JULY 2011
FEATURES
High-speed access time: 45ns
Low Active Power: 50 mW (typical)
Low Standby Power: 10 mW (typical) CMOS standby
TTL compatible interface levels
Single 5V ± 10% power supply
Fully static operation: no clock or refresh required
Available in 32-pin sTSOP-I, 32-pin SOP and 32-pin TSOP-II packages
Commercial, Industrial and Automotive temperature ranges available
Lead-free available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION The ISSI IS62C5128BL and IS65C5128BL are high-speed,
4,194,304-bit static RAMs organized as 524,288 words by
8 bits. They are fabricated using ISSI's high-performance
CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 45ns with low power consumption.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62C5128BL and IS65C5128BL are packaged in the JEDEC standard 32-pin sTSOP-I, 32-pin SOP and 32-pin TSOP-II packages
A0-A18
VDD GND I/O0-I/O7
DECODER
512K X 8 MEMORY ARRAY
I/O DATA CIRCUIT
COLUMN I/O
CE
OE
CONTROL CIRCUIT
WE
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