IS65WV10248DBLL

IS62WV10248DALL/BLL IS65WV10248DALL/BLL 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM MA Y 2009 FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – 30 mW (typical) operating – 12 µW (typical) CMOS standby TTL compatible interface levels Single power supply – 1.65V--2.2V Vdd (62/65WV10248DALL) – 2.4V--3.6V Vdd (62/65WV10248DBLL) Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Automotive temperature (-40oC to +125oC) Lead-free available DESCRIPTION The ISSI IS62WV10248DALL/ IS62WV10248DBLL are high-speed, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is low (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62WV10248DALL and IS62WV10248DBLL are packaged in the JEDEC standard 48-pin mini BGA (9mm x 11mm) and 44-Pin TSOP (TYPE II). FUNCTIONAL BLOCK DIAGRAM A0-A19 VDD GND I/O0-I/O7 DECODER I/O DATA CIRCUIT 1M x 8 MEMORY ARRAY COLUMN I/O CS2 CS1 CONTROL OE CIRCU...