ULTRA LOW POWER CMOS STATIC RAM
IS62/65WV51216EALL IS62/65WV51216EBLL
512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
NOVEMBER 2014
KEY FEATURES...
Description
IS62/65WV51216EALL IS62/65WV51216EBLL
512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
NOVEMBER 2014
KEY FEATURES High-speed access time: 45ns, 55ns CMOS low power operation – 36 mW (typical) operating – 12 µW (typical) CMOS standby TTL compatible interface levels Single power supply –1.65V—2.2V VDD (62/65WV51216EALL) – 2.2V--3.6V VDD (62/65WV51216EBLL) Data control for upper and lower bytes Automotive temperature (-40oC to +125oC)
BLOCK DIAGRAM
DESCRIPTION
The IS62WV51216EALL/ IS62WV51216EBLL are
high-speed, 8M bit static RAMs organized as 512K
words by 16 bits. It is fabricated using 's high-
performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When is HIGH (deselected) or when CS2 is low
(deselected) or when is low , CS2 is high and both
and are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW
Write Enable
controls both writing and reading of
the memory. A data byte allows Upper Byte
and
Lower Byte ( access. The IS62WV51216EALL and IS62WV51216EBLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x8mm), 44-Pin TSOP (TYPE II) and 48-pin TSOP (TYPE l).
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