Fast Recovery Epitaxial Diode
Fast Recovery Epitaxial Diode (FRED) Module
Preliminary data
VRSM V
1200
VRRM V
1200
Type MEO 450-12DA
MEO 450-12 D...
Description
Fast Recovery Epitaxial Diode (FRED) Module
Preliminary data
VRSM V
1200
VRRM V
1200
Type MEO 450-12DA
MEO 450-12 DA
VRRM = 1200 V IFAVM = 453 A trr = 450 ns
31
3 1
Symbol IFRMS IFAVM ÿÿx IFRM IFSM
I2t
TVJ Tstg TSmax Ptot VISOL
Md
dS dA a Weight
Test Conditions
TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM
TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque (M6)
Terminal connection torque (M6)
Creeping distance on surface Strike distance through air Maximum allowable acceleration
Maximum Ratings
640 453 2460
A A A
4800 5280
A A
4320 4750
A A
115200 117100
A2s A2s
93300 94800
A2s A2s
-40...+150 -40...+125
110
°C °C °C
1750 W
3000 3600
V~ V~
2.25-2.75/20-25 Nm/lb.in. 4.50-5.50/40-48 Nm/lb.in.
12.7 9.6 50
mm mm m/s2
150 g
Symbol
IR
VF
VT0 rT RthJH RthJC trr IRM
Test Conditions
TVJ = 25°C TVJ = 25°C TVJ = 125°C
VR = VRRM VR = 0.8 VRRM VR = 0.8 VRRM
IF = 300 A; IF = 520 A;
TVJ = 125°C TVJ = 25°C TVJ = 125°C TVJ = 25°C
For power-loss calculations only
DC current DC current
IF = 600 A VR= 600 V -di/dt = 800 A/ms
TVJ = 100°C TVJ = 25°C TVJ = 100°C
Characteristic Values (per diode) typ. max.
24 mA 6 mA
120 mA
1.51 V 1.78 V 1.76 V...
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