Document
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
SFH 495 P SFH 4552
SFH 495 P
SFH 4552
Wesentliche Merkmale • Stimulierter Emitter mit sehr hohem
Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei
hohen Strömen • Hohe Zuverlässigkeit • Gegurtet lieferbar
Anwendungen • Datenübertragung • Fernsteuerungen • „Messen, Steuern, Regeln“
Features • Stimulated emitter with high efficiency • Laser diode in diffuse package • Suitable esp. for pulse operation at high current • High reliability • Available on tape and reel
Applications • Data transfer • Remote controls • For drive and control circuits
Typ Type
SFH 495 P
Bestellnummer Ordering Code
Q62703-Q2891
SFH 4552 Q62702-P5054
Gehäuse Package
5-mm-LED-Gehäuse (T 1 3/4), plan, schwarz eingefärbt, 2.54-mm-Raster, Kathodenkennzeichnung: kürzerer Anschluß 5 mm LED package (T 1 3/4), flat, black colored, spacing 2.54 mm, cathode marking: short lead.
5-mm-LED-Gehäuse (T 1 3/4), weiß diffus eingefärbt, 2.54-mm-Raster, Kathodenkennzeichnung: kürzerer Anschluß 5 mm LED package (T 1 3/4), white diffuse colored, spacing 2.54 mm, cathode marking: short lead.
2001-04-19
1
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung Parameter
Betriebs- und Lagertemperatur Operating and storage temperature range
Sperrspannung Reverse voltage
Stoßstrom, tp = 200 µs, D = 0
Surge current
Verlustleistung Power dissipation
Wärmewiderstand Thermal resistance
Symbol Symbol
Tstg Top VR
IFSM
Ptot
RthJA
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung Parameter
Symbol Symbol
Wellenlänge der Strahlung Wavelength at peak emission
IF = 200 mA, tp = 20 ms
Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 200 mA
Abstrahlwinkel Half angle SFH 495 P SFH 4552
λpeak ∆λ ϕ
Schaltzeiten, Ie von 10% auf 90% und von 90% auf
10%, bei IF = 200 mA, RL = 50 Ω
Switching times, Ie from 10% to 90% and from
90% to 10%, IF = 200 mA, RL = 50 Ω
Kapazität Capacitance
VR = 0 V, f = 1 MHz
Durchlaßspannung Forward voltage
IF = 1 A, tp = 100 µs
tr, tf Co VF
2001-04-19
2
SFH 495 P, SFH 4552
Wert Value
– 40 … + 85 0 … + 85
1
Einheit Unit °C
V
1A
160 mW
350 K/W
Wert Value 940
4
± 30 ± 50 1
Einheit Unit nm
nm
Grad deg.
ns
90 pF
2.1 V
SFH 495 P, SFH 4552
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung Parameter
Schwellenstrom1) Threshold current 1)
Gesamtstrahlungsfluß Total radiant flux
IF = 1 A, tp = 10 µs
Strahlstärke Radiant intensity
IF = 1 A, tp = 10 µs
SFH 495 P SFH 4552
Symbol Symbol
Ith
Φe
Ie
1) Remark: This IRED works efficiently at forward currents higher than Ith.
Wert Value < 150 700
400 200
Einheit Unit mA
mW
mW/sr
Warning: This data sheet refers to high power infrared emitting semiconductors. Depending on operating conditions (drive current, pulse duration, optics, etc.) they may emit luminance/radiance levels considered harmful to the human eye, acc. to IEC 825.1.
When operating powerful emitters, care should be taken to comply with IEC 825.1 to minimize any possible eye hazard:
– Use lowest possible drive level – Use diffusing optics where possible – Avoid staring into powerful emitters or connected fibers
2001-04-19
3
Radiant Intensity Ie = f (IF)
160 %
Ιe 140
OHF00328
120
100
80
60
40
20
0 0 0.4 0.8 1.2 1.6 A 2.0 ΙF
Radiation Characteristics SFH 495 P Irel = f (ϕ)
40 30 20 10
ϕ 50
60
Forward Current IF = f (VF)
2.0 A
ΙF 1.8
OHF00329
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 1.4 1.6 1.8 2.0 2.2 V 2.4
VF
0 OHF00330 1.0
0.8 0.6
70 0.4
80 0.2 90 0
100 1.0 0.8 0.6
0.4
0 20 40 60 80 100 120
Radiation Characteristics SFH 4552 Irel = f (ϕ)
40 30 20
10
ϕ
50
0 1.0
0.8
OHF00441
60 0.6
70 0.4
80 0.2 0
90
100 1.0 0.8 0.6
0.4
0 20 40 60 80 100 120
2001-04-19
4
SFH 495 P, SFH 4552
Maßzeichnung Package Outlines
SFH 495 P
29.0 (1.142) 27.0 (1.063)
5.0 (0.197) 4.2 (0.165)
2.54 (0.100) spacing 0.6 (0.024) 0.4 (0.016) 0.8 (0.031) 0.4 (0.016) ø5.1 (0.201) ø4.8 (0.189)
1.8 (0.071) 1.2 (0.047)
Anode Area not flat
3.85 (0.152) 3.35 (0.132) Chip position
SFH 495 P, SFH 4552
5.9 (0.232) 5.5 (0.217) 0.6 (0.024) 0.4 (0.016)
GEXY6971
2.54 (0.100) spacing 0.8 (0.031) 0.4 (0.016) ø5.1 (0.201) ø4.8 (0.189)
SFH 4552
0.6 (0.024) 0.4 (0.016)
Area not flat
6.9 (0.272) 6.1 (0.240) 5.7 (0.224) 5.5 (0.217)
Cathode
1.8 (0.071)
1.2 (0.047) 29.5 (1.161) 27.5 (1.083)
4.0 (0.157) 3.4 (0.134)
Chip position
5.9 (0.232) 5.5 (0.217)
0.6 (0.024) 0.4 (0.016)
GEXY6632
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
2001-04-19
5
SFH 495 P, SFH 4552
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in questi.