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SFH495P Dataheets PDF



Part Number SFH495P
Manufacturers OSRAM
Logo OSRAM
Description GaAs Infrared Emitter
Datasheet SFH495P DatasheetSFH495P Datasheet (PDF)

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 SFH 495 P SFH 4552 Wesentliche Merkmale • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen • Hohe Zuverlässigkeit • Gegurtet lieferbar Anwendungen • Datenübertragung • Fernsteuerungen • „Messen, Steuern, Regeln“ Features • Stimulated emitter with high efficiency • Laser diode in diffuse package • Suitable esp. for pulse operation at high .

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 SFH 495 P SFH 4552 Wesentliche Merkmale • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen • Hohe Zuverlässigkeit • Gegurtet lieferbar Anwendungen • Datenübertragung • Fernsteuerungen • „Messen, Steuern, Regeln“ Features • Stimulated emitter with high efficiency • Laser diode in diffuse package • Suitable esp. for pulse operation at high current • High reliability • Available on tape and reel Applications • Data transfer • Remote controls • For drive and control circuits Typ Type SFH 495 P Bestellnummer Ordering Code Q62703-Q2891 SFH 4552 Q62702-P5054 Gehäuse Package 5-mm-LED-Gehäuse (T 1 3/4), plan, schwarz eingefärbt, 2.54-mm-Raster, Kathodenkennzeichnung: kürzerer Anschluß 5 mm LED package (T 1 3/4), flat, black colored, spacing 2.54 mm, cathode marking: short lead. 5-mm-LED-Gehäuse (T 1 3/4), weiß diffus eingefärbt, 2.54-mm-Raster, Kathodenkennzeichnung: kürzerer Anschluß 5 mm LED package (T 1 3/4), white diffuse colored, spacing 2.54 mm, cathode marking: short lead. 2001-04-19 1 Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Stoßstrom, tp = 200 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Tstg Top VR IFSM Ptot RthJA Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Symbol Symbol Wellenlänge der Strahlung Wavelength at peak emission IF = 200 mA, tp = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 200 mA Abstrahlwinkel Half angle SFH 495 P SFH 4552 λpeak ∆λ ϕ Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 200 mA, RL = 50 Ω Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 200 mA, RL = 50 Ω Kapazität Capacitance VR = 0 V, f = 1 MHz Durchlaßspannung Forward voltage IF = 1 A, tp = 100 µs tr, tf Co VF 2001-04-19 2 SFH 495 P, SFH 4552 Wert Value – 40 … + 85 0 … + 85 1 Einheit Unit °C V 1A 160 mW 350 K/W Wert Value 940 4 ± 30 ± 50 1 Einheit Unit nm nm Grad deg. ns 90 pF 2.1 V SFH 495 P, SFH 4552 Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Schwellenstrom1) Threshold current 1) Gesamtstrahlungsfluß Total radiant flux IF = 1 A, tp = 10 µs Strahlstärke Radiant intensity IF = 1 A, tp = 10 µs SFH 495 P SFH 4552 Symbol Symbol Ith Φe Ie 1) Remark: This IRED works efficiently at forward currents higher than Ith. Wert Value < 150 700 400 200 Einheit Unit mA mW mW/sr Warning: This data sheet refers to high power infrared emitting semiconductors. Depending on operating conditions (drive current, pulse duration, optics, etc.) they may emit luminance/radiance levels considered harmful to the human eye, acc. to IEC 825.1. When operating powerful emitters, care should be taken to comply with IEC 825.1 to minimize any possible eye hazard: – Use lowest possible drive level – Use diffusing optics where possible – Avoid staring into powerful emitters or connected fibers 2001-04-19 3 Radiant Intensity Ie = f (IF) 160 % Ιe 140 OHF00328 120 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 A 2.0 ΙF Radiation Characteristics SFH 495 P Irel = f (ϕ) 40 30 20 10 ϕ 50 60 Forward Current IF = f (VF) 2.0 A ΙF 1.8 OHF00329 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.4 1.6 1.8 2.0 2.2 V 2.4 VF 0 OHF00330 1.0 0.8 0.6 70 0.4 80 0.2 90 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Radiation Characteristics SFH 4552 Irel = f (ϕ) 40 30 20 10 ϕ 50 0 1.0 0.8 OHF00441 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2001-04-19 4 SFH 495 P, SFH 4552 Maßzeichnung Package Outlines SFH 495 P 29.0 (1.142) 27.0 (1.063) 5.0 (0.197) 4.2 (0.165) 2.54 (0.100) spacing 0.6 (0.024) 0.4 (0.016) 0.8 (0.031) 0.4 (0.016) ø5.1 (0.201) ø4.8 (0.189) 1.8 (0.071) 1.2 (0.047) Anode Area not flat 3.85 (0.152) 3.35 (0.132) Chip position SFH 495 P, SFH 4552 5.9 (0.232) 5.5 (0.217) 0.6 (0.024) 0.4 (0.016) GEXY6971 2.54 (0.100) spacing 0.8 (0.031) 0.4 (0.016) ø5.1 (0.201) ø4.8 (0.189) SFH 4552 0.6 (0.024) 0.4 (0.016) Area not flat 6.9 (0.272) 6.1 (0.240) 5.7 (0.224) 5.5 (0.217) Cathode 1.8 (0.071) 1.2 (0.047) 29.5 (1.161) 27.5 (1.083) 4.0 (0.157) 3.4 (0.134) Chip position 5.9 (0.232) 5.5 (0.217) 0.6 (0.024) 0.4 (0.016) GEXY6632 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2001-04-19 5 SFH 495 P, SFH 4552 Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in questi.


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