S80N10S

SI-TECH SEMICONDUCTOR CO.,LTD S80N10R/S N-Channel MOSFET Features █ 80V,100A,Rds(on)(typ)=5.8mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products. Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS PD TJ TSTG Drain-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Range Thermal Characteristics Symbol Rth j-c Rth c-s Rth j-a Parameter Thermal Resistance, Junction to case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Value 80 100 70 320 ± 30 784 208 1.39 -55 to +175 -55 to +175 Max. 0.72 0.5 62.5 Units V A A A V mJ W W/℃ ℃ ℃ Units ℃/ W ℃/ W ℃/ W - 1 - Mar.2016 SI-TECH SEMICONDUCTOR CO.,LTD S80N10R/S Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions BVDSS IDSS IGSS VGS(th) RDS(on) Qg Qgs Qgd t d(on) tr t ...