TSHA6503

TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 94 8389 DESCRIPTION The TSHA650. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Peak wavelength: λp = 875 nm High reliability Angle of half intensity: ϕ = ± 24° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS Infrared remote control and free air data transmission systems with comfortable radiation angle This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY COMPONENT TSHA6500 Ie (mW/sr) 20 TSHA6501 25 TSHA6502 30 TSHA6503 35 Note Test conditions see table “Basic Characteristics” ϕ (deg) ± 24 ± 24 ± 24 ± 24 λP (nm) 875 875 875 875 ORDERING INFORMATION ORDERING CODE TSHA6500 TSHA6501 TSHA6502 TSHA6503 Note MOQ: minimum order quantity PACKAGING Bulk Bulk Bulk Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation ...