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PJU5NA80

Pan Jit International

800V N-Channel MOSFET

PPJU5NA80 / PJD5NA80 / PJP5NA80 / PJF5NA80 800V N-Channel MOSFET Voltage 800 V Current 5A Features  RDS(ON), VGS@1...


Pan Jit International

PJU5NA80

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Description
PPJU5NA80 / PJD5NA80 / PJP5NA80 / PJF5NA80 800V N-Channel MOSFET Voltage 800 V Current 5A Features  RDS(ON), VGS@10V,ID@ 2.5A<2.7Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams  TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams  TO-220AB Approx. Weight : 0.067 ounces, 2 grams  ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams ITO-220AB-F TO-220AB TO-252AA TO-251AA Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TO-251AA Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Case - Junction to Ambient VDS VGS ID IDM EAS PD TJ,TSTG RθJC RθJA 140 1.12 0.89 110 TO-220AB ITO-220AB-F TO-252AA UNITS 800 +30 5 20 323 146 48 1.17 0.38 140 1.12 V V A A mJ W W/ oC -55~150 oC 0.86 2.6 0.89 oC/W 62.5 120 110  Limited only By Maximum Junction Temperature March 10,2014-REV.00 Page 1 PPJU5NA80 / PJD5NA80 / PJP5NA80 / PJF5NA80 ...




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