MS15N50

MS15N50 N-Channel Enhancement Mode Power MOSFET Description The MS15N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Application Power Factor Correction Flat Panel Power Full and Half Bridge Power Supplies Two-Transistor Forward Power Supplies Graphic symbol Packing & Order Information 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter Value Unit VDSS VGS ID Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous (TC=25°C) Drain Current -Continuous (TC=100°C) 500 V ±30 V 15 A 9A IDM Drain Current -Pulsed 60 A IAR Avalanche Current 15 A EAS Single Pulsed Avalanche Energy 750 mJ EAR Repetitive Avalanche Energy 25 mJ dV/dt Peak Diode Recovery dV/dt 4.5 V/ns TJ Storage Temperature Drain current limited by maximum junction temperature Publication Order Number: [MS15N50] 150 °C © Bruckewell Technology Corporation Rev. A -2014 MS15N50 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol Parameter Power Dissipation (TC=25°C) PD Derate above 25C TSTG Operating Junction and Storage Temperature Maxim...