MS10N65SJ

MS10N65SJ 10A 650V N-Channel Super Junction MOSFET GENERAL DESCRIPTION The MS10N65SJ is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, super junction device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications FEATURES Low RDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance Optimized design for high performance power systems Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Continuous drain current Pulsed drain current Avalanche energy, single pulse Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Symbol ID ID, pulse E AS I AR dv/dt VGS Ptot Tj, Tstg Value Tc=25oC Tc=25oC ID=8.3A limited by Tjmax VDS=480V, ID=9.5A, Tj=125oC static AC (f>1Hz) Tc=25oC Operating Junction and Storage Temperature a When mounted on 1inch square 2oz copper clad FR-4 9.5 28.5 340 5 50 ±20 ±30 95 -50 to +150 150 Unit A A mJ A V/nS V V W °C °C ©Bruckewell Technology Corporation Rev. A -2013 MS10N65SJ 10A 650V N-Channel Super Junction MOSFET Characteristics (Tc=25°C, unless otherwise specified) Symbol Test Conditions Static Characteristics VGS VDS = VGS, ID=250μA *RDS(ON) VGS =10V,ID =4.75A VGS=10V, ID=4.75A, Tj=150°C ...