MA2D750

Schottky Barrier Diodes (SBD) MA2D750 Silicon epitaxial planar type For switching mode power supply I Features IF(AV) = 10 A rectification is possible Single type TO-220D-B1 package I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Repetitive peak reverse-voltage Average forward current Non-repetitive peak forwardsurge-current * VRRM IF(AV) IFSM 40 10 60 V A A Junction temperature Storage temperature Tj −40 to +125 Tstg −40 to +125 °C °C Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 φ 3.2±0.1 1.5-+00.4 1.4±0.2 0.8±0.1 2.6±0.1 0.55±0.15 2.54±0.30 5.08±0.50 12 1 : Cathode 2 : Anode TO-220D-B1 Package I Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Reverse current (DC) Forward voltage (DC) High voltage rectification IR VF Rth(j-c) VR = 40 V, TC = 25°C IF = 10 A, TC = 25°C Note) Rated input/output frequency: 10 MHz Min Typ Max Unit 3 mA 0.55 V 3.0 °C/W Publication date: August 2001 SKH00005AED 1 MA2D750 Forward current IF (mA) Reverse current IR (mA) IF  VF 105 104 TC = 125°C 103 102 10 75°C 25°C −20°C 1 10−1 10−2 10−3 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) IR  VR 102 TC = 125°C 10 75°C 1 10−2 25°C 10−3 10−4 0 10 20 30 40 50 60 Reverse voltage VR (V) 2 SKH00005AED Request for your special attention and precautions in using the technical information and semicon...