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SMLJ120CA Dataheets PDF



Part Number SMLJ120CA
Manufacturers MDE
Logo MDE
Description SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Datasheet SMLJ120CA DatasheetSMLJ120CA Datasheet (PDF)

MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com SMLJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 TO 170 Volts 3000 Watt Peak Pulse Power FEATURES • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Excellent clamping.

  SMLJ120CA   SMLJ120CA


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MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com SMLJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 TO 170 Volts 3000 Watt Peak Pulse Power FEATURES • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Excellent clamping capability • Repetition rate (duty cycle):0.01% • Fast response time: typically less than 1.0 ps from 0 volts to BV for unidirectional types • Typical IR less than 1µA above 10V • High temperature soldering: 250°C/10 seconds at terminals • Plastic package has Underwriters Laboratory Flammability Classification 94 V-O MECHANICAL DATA DO-214AB (SMC J-Bend) Cathode Band 0.126 (3.20) 0.114 (2.90) 0.245 (6.22) 0.220 (5.59) 0.103 (2.62) 0.079 (2.06) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) MAX. 0.320 (8.13) 0.305 (7.75) Dimensions in inches and(millimeters) Case: JEDEC DO214AB. Molded plastic over glass passivated junction Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denoted positive end (cathode) except Bidirectional Standard Packaging: 12mm tape (EIA STD RS-481) Weight: 0.007 ounces, 0.21 grams) DEVICES FOR BIPOLAR APPLICATIONS For Bidirectional use C or CA Suffix for types SMLJ5.0 thru types SMLJ170 (e.g. SMLJ5.0C, SMLJ170CA) Electrical characteristics apply in both directions. MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. RATING SYMBOL VALUE Peak Pulse Power Dissipation on 10/1000 µs waveform (NOTE 1, 2, Fig.1) PPPM Minimum 3000 Peak Pulse Current of on 10/1000 µs waveform (Note 1,Fig 3) IPPM SEE TABLE 1 Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed on Rated Load, (JEDEC Method)(Note2, 3) IFSM 300 Operatings and Storage Temperature Range NOTES: TJ, TSTG -55 +150 1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2. 2. Mounted on Copper Pad area of 8.0mm x 8.0mm (20x20mm) per Fig.5. 3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum. UNITS Watts Amps Amps °C Certified RoHS Compliant UL File # E223026 11/13/2013 MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com RATING AND CHARACTERISTIC CURVES SMLJ SERIES FF N Fig. 1 - Peak Pulse Power Rating Curve o 1000 n Non-repetitive pulse waveform shown in Fig.3 TA = 25°C 100 PPPM-Peak Pulse Power (kW) 10 1 10T t 0.1 0.0000001 .000001 0.00001 td - Pulse Width (sec.) 0.0001m 0.001m Fig.3 - Pulse Waveform 150 tr = 10μsec. TJ = 25°C Pulse Width(td)is defined Peak Value IPPM 100 as the point where the peak current decays to 50% of IPPM Half Value- IPPM 2 Peak Pulse Power (PPP) or Current (IPP) Derating in 100 87.5 75 62.5 50 37.5 25 12.5 0 0 Fig.2 - Pulse Derating 25 50 75 100 125 150 175 200 TA - Ambient Temperature 1000000 Fig. 4 - Typical Junction Capacitance 10000 Bi-directional V=OV Uni-directional @VR Uni-directional V=OV CJ - Capacitance (pF) IPPM - Peak Pulse Current,% IRSM 100 50 10/1000μsec.Waveform as defined by R.E.A. Bi-directional @VR td 0 0 1.0 1 1 2.03.0 3.0 4.0 4.0 F t - Time(ms) 10 100 VWM - Reverse Stand-Off 1000 Fig. 5 - Steady State Power Derating Curve Fig.6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Only 8 8.0 350 . 7.0 60Hz Resistive or Inductive Load 300 8.3ms Single Half Sine-Wave (JEDEC Method)TJ=TJ max. 6.0 5.0 250 PM(AV),Steady State Power Dissipation (W) 4.0 200 3.0 2.0 150 1.0 100 IFSM-Peak Forward Surge 00 N10 t TL - Lead Temperature (°C) 50 1 10 100 Number of Cycles at 60 Hz 11/13/2013 MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com 3000 Watt Surface Mount TVS DEVICE REVERSE BREAKDOWN BREAKDOWN TEST UNI-POLAR BI-POLAR MARKING CODE UNI BI STANDOFF VOLTAGE VRWM (V) VOLTAGE VBR (V) MIN. @ IT VOLTAGE VBR (V) MAX. @ IT CURRENT (IT) mA SMLJ5.0A SMLJ5.0CA RDE DDE 5.00 6.40 7.00 10 SMLJ6.0A SMLJ6.0CA RDG DDG 6.00 6.67 7.37 10 SMLJ6.5A SMLJ6.5CA RDK DDK 6.50 7.22 7.98 10 SMLJ7.0A SMLJ7.0CA PDM DDM 7.00 7.78 8.60 10 SMLJ7.5A SMLJ7.5CA PDP DDP 7.50 8.33 9.21 1 SMLJ8.0A SMLJ8.0CA PDR DDR 8.00 8.89 9.83 1 SMLJ8.5A SMLJ8.5CA PDT DDT 8.50 9.44 10.40 1 SMLJ9.0A SMLJ9.0CA PDV DDV 9.00 10.00 11.10 1 SMLJ10A SMLJ10CA PDX DDX 10.00 11.10 12.30 1 SMLJ11A SMLJ11CA PDZ DDZ 11.00 12.20 13.50 1 SMLJ12A SMLJ12CA PEE DEE 12.00 13.30 14.70 1 SMLJ13A SMLJ13CA PEG DEG 13.00 14.


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