Semiconductor
Features
• Low power rectified • Silicon epitaxial type • High reliability
Ordering Information
Type No...
Semiconductor
Features
Low power rectified Silicon epitaxial type High reliability
Ordering Information
Type No.
Marking
SDB310D
B1
Outline Dimensions
Package Code SOD-323
2.35~2.65 1.60~1.80
0.35 Max.
1.15~1.35
21
CATHODE MARK
SDB310D
Schottky Barrier Diode
unit : mm
21
0.80~1.00
0.20 Min.
PIN Connections 1. Anode 2. Cathode
0.10 Max. 0.19 Max.
KSD-C002-000
1
SDB310D
Absolute maximum ratings
Characteristic
Symbol
Ratings
Ta=25°C
Unit
Reverse voltage
VR 30
Repetitive peak forward current
IFRM*
0.5
Forward current
IF 0.2
Non-repetitive peak forward current(10ms)
IFSM
2
Power dissipation
PD 150
Junction temperature
Tj 150
Storage temperature
* : δ = D/T =0.33 (T<1S)
Tstg -55 ~ 150
* : Unit ratings. Total rating=Unit rating×1.5
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Forward voltage 1
VF(1)
IF=10mA
-
Forward voltage 2
VF(2)
IF=30mA
-
Reverse current
IR VR=30V
-
Total capacitance
CT VR=1V, f=1MHz
-
Reverse recovery time
trr
IF= IR=10mA, IRR= 1mA, RL=100Ω
-
Typ.
-
V A A A mW °C °C
Ta=25°C
Max. Unit
0.4 V 0.5 V
1 µA 10 pF 5 ns
KSD-C002-000
2
Electrical Characteristic Curves
Fig. 1 IF-VF
Fig. 2 IR -VR
SDB310D
Fig. 3 CT-VR
KSD-C002-000
3
...