SDB3101

1.12 Max. 0.38 0~0.1 Semiconductor Features Low power rectified Silicon epitaxial type High reliability Ordering Information Type No. Marking SDB3101 DB1 Outline Dimensions Package Code SOT-23 2.9±0.1 1.90 Typ. 2.4±0.1 1.30±0.1 1 3 2 0.45~0.60 0.4 Typ. 0.2 Min. -0.03 +0.05 SDB3101 Schottky Barrier Diode unit : mm 3 12 PIN Connections 1. Anode 2. NC 3. Cathode 0.124 KSD-2030-000 1 SDB3101 Absolute maximum ratings Characteristic Symbol Ratings Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature * : δ = D/T =0.33 (T<1S) VR IFRM* IF IFSM PD Tj Tstg 30 0.5 0.2 2 150 150 -55 ~ 150 Electrical Characteristics Characteristic Symbol Test Condition Min. Forward voltage 1 Forward voltage 2 Reverse current Total capacitance Reverse recovery time VF(1) VF(2) IR CT trr IF=10mA IF=30mA VR=30V VR=1V, f=1MHz IF= IR=10mA, IRR= 1mA, RL=100Ω - Typ. - Ta=25°C Unit V A A A mW °C °C Ta=25°C Max. Unit 0.4 V 0.5 V 1 µA 10 pF 5 ns KSD-2030-000 2 Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR -VR SDB3101 Fig. 3 CT-VR KSD-2030-000 3 ...