SSF6N60G

Main Product Characteristics: VDSS RDS(on) 600V 1.32Ω (typ.) ID 6A Features and Benefits: TO-251  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF6N60G Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=30mH Avalanche Current @ L=30mH Operating Junction and Storage Temperature Range Max. 6 3.8 24 125 1.00 600 ± 30 421 5.3 -55 to +150 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2012.09.25 www.silikron.com Version : 1.1 page 1 of 8 SSF6N60G Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 1.00 110 Units ℃/W ℃/W Electrical Characterizes @TA=25℃ unless oth...