N-Channel MOSFET
Main Product Characteristics:
VDSS RDS(on)
ID
650V 0.32Ω (typ.)
11A
Features and Benefits:
Feathers: High dv/dt and...
Description
Main Product Characteristics:
VDSS RDS(on)
ID
650V 0.32Ω (typ.)
11A
Features and Benefits:
Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
TO-220F
SSF11NS65UF
Marking and pin Assignment
Schematic diagram
Description:
The SSF11NS65UF series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=133mH Avalanche Current @ L=133mH Operating Junction and Storage Temperature Range
Max. 11 7 44 31 0.25 650 ± 30 250 1.94
-55 to +150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.08.15 www.silikron.com
Version : 1.2
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SSF11NS65UF
Thermal Resistance
Symbol RθJC RθJA
Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④
Typ. — —
Max. 4.0 80
Units ℃/W ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdow...
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