MAGX-011086

MAGX-011086 GaN on Silicon General Purpose Amplifier DC - 6 GHz, 28 V, 4 W Features  GaN on Si HEMT D-Mode Amplifier  Suitable for Linear & Saturated Applications  Tunable from DC - 6 GHz  28 V Operation  9 dB Gain @ 5.8 GHz  45% Drain Efficiency @ 5.8 GHz  100% RF Tested  Thermally-Enhanced 4 mm 24-Lead QFN  RoHS* Compliant Rev. V3 Description The MAGX-011086 is a GaN on silicon HEMT amplifier optimized for DC - 6 GHz operation in a user friendly package ideal for high bandwidth applications. The device has been designed for saturated and linear operation with output power levels of 4 W (36 dBm) in an industry standard, low inductance, surface mount QFN package. The pads of the package form a coplanar launch that naturally absorbs lead parasitics and features a small PCB outline for space constrained applications. The MAGX-011086 is ideally suited for Wireless LAN, High Dynamic Range LNA’s, broadband general purpose, land mobile radio, defense communications, wireless infrastructure, and ISM applications. Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology. Ordering Information1 Part Number MAGX-011086 MAGX-011086-TR0500 MAGX-011086-SMB2 Package Bulk Quantity 500 piece reel Sample Board 1. Reference Application Note M513 for reel size information. Functional Schematic N/C N/C N/C N/C N/C N/C 24 23 22 21 20 19 N/C 1 N/C 2 RFIN / VG 3 RFIN / VG 4 N/C 5 N/C 6 Input Match 25 Paddle 18 N/C 17 N/C 16 RFOUT / VD 15 RFOUT / VD 14 N/C 13 N/...